DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, D | ko |
dc.contributor.author | Jeon, SM | ko |
dc.contributor.author | Lee, G | ko |
dc.contributor.author | Kim, Sehun | ko |
dc.contributor.author | Hwang, C | ko |
dc.contributor.author | Lee, H | ko |
dc.date.accessioned | 2009-09-21T05:08:17Z | - |
dc.date.available | 2009-09-21T05:08:17Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-09 | - |
dc.identifier.citation | SURFACE SCIENCE, v.601, pp.3823 - 3827 | - |
dc.identifier.issn | 0039-6028 | - |
dc.identifier.uri | http://hdl.handle.net/10203/11359 | - |
dc.description.abstract | We investigate the temperature-dependent surface etching process induced by Ce silicide on Si(100) using scanning tunneling microscopy and X-ray photoelectron spectroscopy. We found that step edges on the Si(100) surface are gradually roughened due to the formation of Cc silicide as a function of substrate temperature. Unlike the Si(111) surface, however, terrace etching also occurs in addition to step roughening at 500 degrees C. Moreover, we found that Si(1 00) dinners are released and formed dimer vacancy lines because bulk diffusion of Ce silicide into Si(100) surface occurs the defect-induced strain at higher temperature (similar to 600 degrees C). (C) 2007 Elsevier B.V. All rights reserved. | - |
dc.description.sponsorship | This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government(MOST) (No. R01-2006-000-11247-0). Additional support (Prof. Sehun Kim) was supported by the Brain Korea 21 project, the SRC programs (Center for Nanotubes and Nanostructured Composites and the Center for Strongly Correlated Material Research) of MOST/KOSEF, and the National R & D Project for Nano Science and Technology. One of authors (Dr. Hwang) was supported by Vacuum Infra-Technology project. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | CHAIN STRUCTURES | - |
dc.subject | SI(111) | - |
dc.subject | HYDROGEN | - |
dc.subject | GD | - |
dc.title | Surface etching induced by Ce silicide formation on Si(100) | - |
dc.type | Article | - |
dc.identifier.wosid | 000250414600034 | - |
dc.identifier.scopusid | 2-s2.0-34548655013 | - |
dc.type.rims | ART | - |
dc.citation.volume | 601 | - |
dc.citation.beginningpage | 3823 | - |
dc.citation.endingpage | 3827 | - |
dc.citation.publicationname | SURFACE SCIENCE | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Kim, Sehun | - |
dc.contributor.nonIdAuthor | Lee, D | - |
dc.contributor.nonIdAuthor | Jeon, SM | - |
dc.contributor.nonIdAuthor | Lee, G | - |
dc.contributor.nonIdAuthor | Hwang, C | - |
dc.contributor.nonIdAuthor | Lee, H | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | surface etching | - |
dc.subject.keywordAuthor | STM | - |
dc.subject.keywordAuthor | XPS | - |
dc.subject.keywordAuthor | DVL | - |
dc.subject.keywordAuthor | step roughening | - |
dc.subject.keywordPlus | CHAIN STRUCTURES | - |
dc.subject.keywordPlus | SI(111) | - |
dc.subject.keywordPlus | HYDROGEN | - |
dc.subject.keywordPlus | GD | - |
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