An HSPICE HBT model for InP-based single HBTs

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An ABT model for InP-based single HBT's (SHBT's) was developed based on the conventional Gummel-Poon large-signal BJT model available in HSPICE. Several typical characteristics observed from InP-based SHBT's, such as soft breakdown and collector transit-time delay effects, were modeled through a macro modeling approach. Excellent agreement has been achieved between the experimental and calculated results based on the model.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1996-09
Language
ENG
Article Type
Article
Keywords

P-I-N/HBT; INGAAS

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.43, no.9, pp.1470 - 1472

ISSN
0018-9383
DOI
10.1109/16.535336
URI
http://hdl.handle.net/10203/1133
Appears in Collection
EE-Journal Papers(저널논문)
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