An HSPICE HBT model for InP-based single HBTs

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dc.contributor.authorYang, Kyounghoonko
dc.contributor.authorGutierrezAitken, ALko
dc.contributor.authorZhang, Xko
dc.contributor.authorBatthacharya, Pko
dc.contributor.authorHaddad, GIko
dc.date.accessioned2007-08-28T03:07:54Z-
dc.date.available2007-08-28T03:07:54Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1996-09-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.43, no.9, pp.1470 - 1472-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/1133-
dc.description.abstractAn ABT model for InP-based single HBT's (SHBT's) was developed based on the conventional Gummel-Poon large-signal BJT model available in HSPICE. Several typical characteristics observed from InP-based SHBT's, such as soft breakdown and collector transit-time delay effects, were modeled through a macro modeling approach. Excellent agreement has been achieved between the experimental and calculated results based on the model.-
dc.description.sponsorshipAdvanced Research Projects Agency and U.S. Army Research Officeen
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectP-I-N/HBT-
dc.subjectINGAAS-
dc.titleAn HSPICE HBT model for InP-based single HBTs-
dc.typeArticle-
dc.identifier.wosidA1996VF57500023-
dc.identifier.scopusid2-s2.0-0030241664-
dc.type.rimsART-
dc.citation.volume43-
dc.citation.issue9-
dc.citation.beginningpage1470-
dc.citation.endingpage1472-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/16.535336-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorYang, Kyounghoon-
dc.contributor.nonIdAuthorGutierrezAitken, AL-
dc.contributor.nonIdAuthorZhang, X-
dc.contributor.nonIdAuthorBatthacharya, P-
dc.contributor.nonIdAuthorHaddad, GI-
dc.type.journalArticleArticle-
dc.subject.keywordPlusP-I-N/HBT-
dc.subject.keywordPlusINGAAS-
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