Birefringence and optical power confinement in horizontal multi-slot waveguides made of Si and SiO2

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Through simulations and measurements, we show that in multi-slot thin film waveguides, the TM polarized modes can be confined mostly in the low refractive index layers of the waveguide. The structure consisted of alternating layers of a-Si and SiO2, in the thickness range between 3 and 40 nm, for which the slots were the SiO2 layers. Simulations were performed using the transfer matrix method and experiments using the m-line technique at 1.55 mu m. The dependence of the birefringence and of the power confinement in the slots was studied as a function of the waveguide thickness, the Si and SiO2 layer thicknesses, and the SiO2/Si layer thickness ratio. We find a large birefringence - a refractive index difference between TE and TM modes - as large as 0.8. For TM polarized modes, up to similar to 85% of the total power in the fundamental mode can be confined in the slots. (c) 2008 Optical Society of America.
Publisher
OPTICAL SOC AMER
Issue Date
2008-06
Language
English
Article Type
Article
Keywords

NANOCRYSTALLINE-SILICON; CONFINING LIGHT; FILMS; NM

Citation

OPTICS EXPRESS, v.16, no.12, pp.8623 - 8628

ISSN
1094-4087
DOI
10.1364/OE.16.008623
URI
http://hdl.handle.net/10203/10855
Appears in Collection
NT-Journal Papers(저널논문)
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