One-dimensional chain structure produced by Ce on vicinal Si(100)

One-dimensional Ce nanowires have been grown on a single-domain vicinal Si(100) surface. The growth mode, including the structural and electronic properties as a function of the substrate temperature and Cc coverage, was studied using scanning tunneling microscopy and scanning tunneling spectroscopy. The results show the formation of Cc nanowires along the step edges on the vicinal Si(100) substrate at 580 degrees C. (c) 2006 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2006-03
Language
ENG
Keywords

SCANNING-TUNNELING MICROSCOPY; DISILICIDE NANOWIRES; SI(001) SURFACES; STEPS; SI(111); GROWTH; NANOSTRUCTURES; INTERFACE; SILICIDE; STATE

Citation

SURFACE SCIENCE, v.600, no.6, pp.1283 - 1289

ISSN
0039-6028
DOI
10.1016/j.susc.2006.01.016
URI
http://hdl.handle.net/10203/10733
Appears in Collection
CH-Journal Papers(저널논문)
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