Towards a high efficiency amorphous silicon solar cell using molybdenum oxide as a window layer instead of conventional p-type amorphous silicon carbide

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A thermally evaporated molybdenum oxide (MoO(3)) film was used as a window layer of a hydrogenated amorphous silicon (a-Si: H) solar cell instead of the conventional p-type hydrogenated amorphous silicon carbide (p-a-SiC:H) film. The short circuit current density (J(SC)) and fill factor were increased due to the wide optical band gap and high conductivity of the MoO(3) film. As a result, the conversion efficiency of the fabricated MoO(3) solar cell was increased to 6.21% compared to the typical a-Si: H solar cell (5.97%). (C) 2011 American Institute of Physics. [doi: 10.1063/1.3624591]
Publisher
AMER INST PHYSICS
Issue Date
2011-08
Language
English
Article Type
Article
Keywords

BARRIER; JUNCTION; VOLTAGE

Citation

APPLIED PHYSICS LETTERS, v.99, no.6, pp.063504

ISSN
0003-6951
DOI
10.1063/1.3624591
URI
http://hdl.handle.net/10203/103384
Appears in Collection
EE-Journal Papers(저널논문)
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