Towards a high efficiency amorphous silicon solar cell using molybdenum oxide as a window layer instead of conventional p-type amorphous silicon carbide

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dc.contributor.authorPark, Sang-Ilko
dc.contributor.authorBaik, Seung-Jaeko
dc.contributor.authorIm, Jong-Sanko
dc.contributor.authorFang, Liangko
dc.contributor.authorJeon, Jin-Wanko
dc.contributor.authorLim, Koeng-Suko
dc.date.accessioned2013-03-12T20:08:04Z-
dc.date.available2013-03-12T20:08:04Z-
dc.date.created2012-12-10-
dc.date.created2012-12-10-
dc.date.issued2011-08-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.99, no.6, pp.063504-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/103384-
dc.description.abstractA thermally evaporated molybdenum oxide (MoO(3)) film was used as a window layer of a hydrogenated amorphous silicon (a-Si: H) solar cell instead of the conventional p-type hydrogenated amorphous silicon carbide (p-a-SiC:H) film. The short circuit current density (J(SC)) and fill factor were increased due to the wide optical band gap and high conductivity of the MoO(3) film. As a result, the conversion efficiency of the fabricated MoO(3) solar cell was increased to 6.21% compared to the typical a-Si: H solar cell (5.97%). (C) 2011 American Institute of Physics. [doi: 10.1063/1.3624591]-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectBARRIER-
dc.subjectJUNCTION-
dc.subjectVOLTAGE-
dc.titleTowards a high efficiency amorphous silicon solar cell using molybdenum oxide as a window layer instead of conventional p-type amorphous silicon carbide-
dc.typeArticle-
dc.identifier.wosid000293857700081-
dc.identifier.scopusid2-s2.0-84860399469-
dc.type.rimsART-
dc.citation.volume99-
dc.citation.issue6-
dc.citation.beginningpage063504-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.3624591-
dc.contributor.localauthorLim, Koeng-Su-
dc.type.journalArticleArticle-
dc.subject.keywordPlusBARRIER-
dc.subject.keywordPlusJUNCTION-
dc.subject.keywordPlusVOLTAGE-
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