Resistive-Memory Embedded Unified RAM (R-URAM)

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A disturb-free unified RAM (URAM) is demonstrated. It consists of a nonvolatile memory (NVM) and a capacitorless dynamic random access memory (DRAM) in a single-cell transistor. The NVM function is achieved by the resistive switching of an Al(2)O(3) film, and the capacitorless DRAM operation is attained by hole accumulation in a floating body. A property of resistive switching-an abrupt change of the bistable resistance state at a specific voltage-permits a high level of immunity to disturbances between NVM and capacitorless DRAM (1T-DRAM) operations compared to the previously proposed URAM whose NVM characteristics originate from charge trapping in the oxide/nitride/oxide layer.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2009-11
Language
English
Article Type
Article
Keywords

NVM; 1T-DRAM; FINFET; DRAM; CELL

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2670 - 2674

ISSN
0018-9383
DOI
10.1109/TED.2009.2030441
URI
http://hdl.handle.net/10203/100725
Appears in Collection
EE-Journal Papers(저널논문)
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