Resistive-Memory Embedded Unified RAM (R-URAM)

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dc.contributor.authorKim, Sung-Hoko
dc.contributor.authorChoi, Sung-Jinko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2013-03-11T23:54:29Z-
dc.date.available2013-03-11T23:54:29Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2009-11-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2670 - 2674-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/100725-
dc.description.abstractA disturb-free unified RAM (URAM) is demonstrated. It consists of a nonvolatile memory (NVM) and a capacitorless dynamic random access memory (DRAM) in a single-cell transistor. The NVM function is achieved by the resistive switching of an Al(2)O(3) film, and the capacitorless DRAM operation is attained by hole accumulation in a floating body. A property of resistive switching-an abrupt change of the bistable resistance state at a specific voltage-permits a high level of immunity to disturbances between NVM and capacitorless DRAM (1T-DRAM) operations compared to the previously proposed URAM whose NVM characteristics originate from charge trapping in the oxide/nitride/oxide layer.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectNVM-
dc.subject1T-DRAM-
dc.subjectFINFET-
dc.subjectDRAM-
dc.subjectCELL-
dc.titleResistive-Memory Embedded Unified RAM (R-URAM)-
dc.typeArticle-
dc.identifier.wosid000271019500038-
dc.identifier.scopusid2-s2.0-70350741211-
dc.type.rimsART-
dc.citation.volume56-
dc.citation.issue11-
dc.citation.beginningpage2670-
dc.citation.endingpage2674-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/TED.2009.2030441-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCapacitorless dynamic random access memory (1T-DRAM)-
dc.subject.keywordAuthordisturb-free-
dc.subject.keywordAuthordynamic random access memory (DRAM)-
dc.subject.keywordAuthornonvolatile memory (NVM)-
dc.subject.keywordAuthorresistance random access memory (RRAM)-
dc.subject.keywordAuthorresistive-memory embedded unified RAM (R-URAM)-
dc.subject.keywordAuthorsoft programming-
dc.subject.keywordAuthorunified RAM (URAM)-
dc.subject.keywordPlusNVM-
dc.subject.keywordPlus1T-DRAM-
dc.subject.keywordPlusFINFET-
dc.subject.keywordPlusDRAM-
dc.subject.keywordPlusCELL-
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