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Showing results 32161 to 32180 of 101410
| Electronic structure and orbital polarization of LaNiO3 with a reduced coordination and under strain: A first-principles study Han, Myung Joon; van Veenendaal, Michel, PHYSICAL REVIEW B, v.84, no.12, 2011-09 |
| Electronic Structure and Photoreactivity of N-Methyllutidone Shim, SangChul; hyun, myung ho; chae, kyu ho, 대한화학회지, v.21, pp.434 - 434, 1977 |
| Electronic structure and thermoelectric transport properties of AgTITe: First-principles calculations Oh, M. W.; Wee, Dang-Moon; Park, S. D.; Kim, B. S.; Lee, H. W., PHYSICAL REVIEW B, v.77, no.16, 2008-04 |
Electronic structure and transport properties of hydrogenated graphene and graphene nanoribbons Choe, D. H.; Bang, Junhyeok; Chang, Kee-Joo, NEW JOURNAL OF PHYSICS, v.12, pp.125005, 2010-12 |
| Electronic structure and x-ray-absorption near-edge structure of amorphous Zr-oxide and Hf-oxide thin films: A first-principles study Kim, S; Kim, Y; Hong, J; Tanaka, I; No, Kwangsoo, JOURNAL OF APPLIED PHYSICS, v.97, pp.301 - 310, 2005-04 |
| Electronic structure modification of platinum on titanium nitride resulting in enhanced catalytic activity and durability for oxygen reduction and formic acid oxidation Yang, Sungeun; Chung, Dong Young; Tak, Young-Joo; Kim, Jiwhan; Han, Haksu; Yu, Jong-Sung; Soon, Aloysius; et al, APPLIED CATALYSIS B-ENVIRONMENTAL, v.174, pp.35 - 42, 2015-09 |
| Electronic structure modifications induced by increased molecular complexity: from triphenylamine to m-MTDATA Zhang, T.; Brumboiu, I. E.; Lanzilotto, V.; Grazioli, C.; Guarnaccio, A.; Johansson, F. O. L.; Coreno, M.; et al, PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.21, no.32, pp.17959 - 17970, 2019-08 |
| Electronic structure of a magnetic quantum ring Kim, N; Ihm, G; Sim, Heung-Sun; Chang, Kee-Joo, PHYSICAL REVIEW B, v.60, no.12, pp.8767 - 8772, 1999-09 |
| Electronic structure of bismuth titanate-base films Bi(4-x)Ln(x)Ti(3)O(12) dependence on substitution atom Kim, Y; Kim, YS; Kim, S; Jeon, YA; No, Kwangsoo, INTEGRATED FERROELECTRICS, v.73, pp.11 - 16, 2005 |
| Electronic structure of collapsed C, BN, and BC3 nanotubes Kim, Yong-Hyun; Sim, Heung-Sun; Chang, Kee-Joo, CURRENT APPLIED PHYSICS, v.1, no.1, pp.39 - 44, 2001-09 |
| Electronic structure of detwinned BaFe2As2 from photoemission and first principles Kim, Yeongkwan; Oh, Hyungju; Kim, Chul; Song, Dongjoon; Jung, Wonsig; Kim, Beomyoung; Choi, Hyoung Joon; et al, PHYSICAL REVIEW B, v.83, no.6, 2011-02 |
| Electronic structure of ellipsoidally deformed quantum dots Lee, IH; Kim, Yong-Hoon; Ahn, KH, JOURNAL OF PHYSICS-CONDENSED MATTER, v.13, no.9, pp.1987 - 1993, 2001-03 |
| Electronic structure of graphene and doping effect on SiO2 Kang, YJ; Kang, J; Chang, Kee-Joo, PHYSICAL REVIEW B, v.78, no.11, pp.115404 - 115404, 2008-09 |
| Electronic structure of In1-xGaxAs/GaAs strained quantum wells with a delta-doped layer Oh, JH; Chang, Kee-Joo; Ihm, G, JOURNAL OF PHYSICS-CONDENSED MATTER, v.8, no.11, pp.1705 - 1712, 1996-03 |
| Electronic Structure of Organic/organic Interface Depending on Heteroepitaxial Growth Using Templating Layer Lim, Hee Seon; Kim, Se-Hun; Kim, Jeong Won, 한국진공학회지, v.23, no.6, pp.351 - 356, 2014-11 |
| Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior Han, W. H.; Oh, Young Jun; Chang, Kee-Joo; Park, Ji-Sang, PHYSICAL REVIEW APPLIED, v.3, no.4, pp.044008, 2015-04 |
| Electronic structure of oxygen vacancy in crystalline InGaO3(ZnO)(m) Lee, W. -J.; Ryu, B.; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.404, no.23-24, pp.4794 - 4796, 2009-12 |
| Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors Noh, Hyeon-Kyun; Chang, Kee-Joo; Ryu, Byung-Ki; Lee, Woo-Jin, PHYSICAL REVIEW B, v.84, no.11, pp.115205 - 115205, 2011-09 |
| Electronic structure of phosphorus dopants in ZnO Lee, Woo Jin; Kang, Joongoo; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.376, pp.699 - 702, 2006-04 |
| Electronic structure of radially deformed BN and BC3 nanotubes Kim, YH; Chang, Kee-Joo; Louie, SG, PHYSICAL REVIEW B, v.63, no.20, pp.205408 - 205408, 2001-05 |
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