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Showing results 1 to 5 of 5

1
Analysis of temperature-dependent I-V characteristics of the Au/n-GaSb Schottky diode

Jang, Junho; Song, Jaeman; Lee, Seung-Seob; Jeong, Sangkwon; Lee, Bong Jae; Kim, Sanghyeon, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.131, 2021-08

2
High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb

Kim, Sang-Hyeon; Roh, Ilpyo; Han, Jae-Hoon; Geum, Dae-Myeong; Kim, Seong Kwang; Kang, Soo Seok; Kang, Hang-Kyu; et al, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.9, pp.42 - 48, 2021

3
Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET

Hur, Ji-Hyun; Jeon, Sanghun, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.5, pp.630 - 634, 2016-10

4
Strucrural properties of GaSb layers grown on InAs, AlSb, and GaSb buffer layers on GaAs (001) substrates

Noh, YK; Hwang, YJ; Kim, MD; Kwon, YJ; Oh, JE; Kim, Y.H; Lee, JeongYong, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1929 - 1932, 2007-06

5
얇은AlSb 완충층을 사용한 GaSb/ Si(001) 박막평가

노영균; 김문덕; 권영진; 김송강; 김영헌; 박세린; 오재응; et al, 새물리, v.53, no.1, pp.34 - 38, 2006-07

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