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Kim, Sanghyeon (김상현)
부교수, School of Electrical Engineering(전기및전자공학부)
Research Area
Monolithic 3D integrated device, Next generation computing device, MicroLED display
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    NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
    1
    Analysis of temperature-dependent I-V characteristics of the Au/n-GaSb Schottky diode

    Jang, Junho; Song, Jaeman; Lee, Seung-Seobresearcher; et al, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.131, 2021-08

    2
    Comparative advantages of a type-II superlattice barrier over an AIGaSb barrier for enhanced performance of InAs/GaSb LWIR nBn photodetectors

    Lee, Hyun-Jin; Jang, Ahreum; Kim, Young Ho; et al, OPTICS LETTERS, v.46, no.16, pp.3877 - 3880, 2021-08

    3
    Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A Review

    Kim, Younghyun; Han, Jae-Hoon; Ahn, Daehwan; et al, MICROMACHINES, v.12, no.6, 2021-06

    4
    Tailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film for integrated optical gas sensors

    Shim, Joonsup; Lim, Jinha; Geum, Dae-Myeong; et al, OPTICS EXPRESS, v.29, no.12, pp.18037 - 18058, 2021-06

    5
    Electrical Analysis for Wafer-Bonded Interfaces of p(+)GaAs/n(+)InGaAs and p(+)InGaAs/n(+)InGaAs

    Geum, Dae-Myeong; Kim, Seong Kwang; Lim, Hyeong-Rak; et al, IEEE ELECTRON DEVICE LETTERS, v.42, no.6, pp.800 - 803, 2021-06

    6
    Stackable InGaAs-on-Insulator HEMTs for Monolithic 3-D Integration

    Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.5, pp.2205 - 2211, 2021-05

    7
    Vertical InGaAs Biristor for Sub-1 V Operation

    Kim, Wu-Kang; Bidenko, Pavlo; Kim, Jongmin; et al, IEEE ELECTRON DEVICE LETTERS, v.42, no.5, pp.681 - 683, 2021-05

    8
    Arrayed MoS2-In0.53Ga0.47As van der Waals Heterostructure for High-Speed and Broadband Detection from Visible to Shortwave-Infrared Light

    Geum, Dae-Myeong; Kim, Suhyun; Khym, JiHoon; et al, SMALL, v.17, no.17, 2021-04

    9
    High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb

    Kim, Sang-Hyeonresearcher; Roh, Ilpyo; Han, Jae-Hoon; et al, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.9, pp.42 - 48, 2021

    10
    Study on Charge-Enhanced Ferroelectric SIS Optical Phase Shifters Utilizing Negative Capacitance Effect

    Bidenko, Pavlo; Han, Jae-Hoon; Song, Jindong; et al, IEEE JOURNAL OF QUANTUM ELECTRONICS, v.56, no.6, 2020-12

    11
    Photo-Responsible Synapse Using Ge Synaptic Transistors and GaAs Photodetectors

    Kim, Seong Kwang; Geum, Dae-Myeong; Lim, Hyeong-Rak; et al, IEEE ELECTRON DEVICE LETTERS, v.41, no.4, pp.605 - 608, 2020-04

    12
    Simulation Study of a Monolithic III-V/Si V-Groove Carrier Depletion Optical Phase Shifter

    Kim, Sanghyeonresearcher; Kim, Younghyun; Ban, Yoojin; et al, IEEE JOURNAL OF QUANTUM ELECTRONICS, v.56, no.2, 2020-04

    13
    Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs Using Sequential Fabrication Process

    Geum, Dae-Myeong; Kim, Seong Kwang; Lee, Subin; et al, IEEE ELECTRON DEVICE LETTERS, v.41, no.3, pp.433 - 436, 2020-03

    14
    3D Stackable Synaptic Transistor for 3D Integrated Artificial Neural Networks

    Kim, Seong Kwang; Jeong, YeonJoo; Bidenko, Pavlo; et al, ACS APPLIED MATERIALS & INTERFACES, v.12, no.6, pp.7372 - 7380, 2020-02

    15
    Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation

    Geum, Dae-Myeong; Kim, Seong Kwang; Kang, Chang-Mo; et al, NANOSCALE, v.11, no.48, pp.23139 - 23148, 2019-12

    16
    Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems

    Geum, Dae-Myeong; Kim, SangHyeonresearcher; Kim, Seong Kwang; et al, SCIENTIFIC REPORTS, v.9, 2019-12

    17
    Epitaxial Lift-Off Technology for Large Size III-V-on-Insulator Substrate

    Lee, Subin; Kim, Seongkwang; Han, Jae-Hoon; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.11, pp.1732 - 1735, 2019-11

    18
    Impact of Bottom-Gate Biasing on Implant-Free Junctionless Ge-on- Insulator n-MOSFETs

    Lim, Hyeong-Rak; Kim, Seongkwang; Han, Jae-Hoon; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.9, pp.1362 - 1365, 2019-09

    19
    Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H-2 annealing with Pt gate electrode

    Kim, Seong Kwang; Geum, Dae-Myeong; Lim, Hyeong-Rak; et al, APPLIED PHYSICS LETTERS, v.115, no.14, 2019-09

    20
    InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K

    Kang, Soo Seok; Geum, Dae-Myeong; Kwak, Kisung; et al, SCIENTIFIC REPORTS, v.9, 2019-09

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