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Kim, Sanghyeon (김상현)
부교수, (전기및전자공학부)

https://www.3doedl.com/

Research Area
Monolithic 3D integrated device, Next generation computing device, MicroLED display
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    NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
    1
    Effects of Back Metal on the DC and RF Characteristics of 3D Stacked InGaAs RF Device for Monolithic 3D RF Applications

    Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; et al, IEEE ELECTRON DEVICE LETTERS, v.44, no.4, pp.598 - 601, 2023-04

    2
    Dielectric-Engineered High-Speed, Low-Power, Highly Reliable Charge Trap Flash-Based Synaptic Device for Neuromorphic Computing beyond Inference

    Kim, Joon Pyo; Kim, Seong Kwang; Park, Seohak; et al, NANO LETTERS, v.23, no.2, pp.451 - 461, 2023-01

    3
    Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization

    Kuk, Songhyeon; Han, Seungmin; Lee, Dong Hyun; et al, IEEE ELECTRON DEVICE LETTERS, v.44, no.1, pp.36 - 39, 2023-01

    4
    Capacitor-Less 4F(2) DRAM Using Vertical InGaAs Junction for Ultimate Cell Scalability

    Kim, Joon Pyo; Sim, Jaeho; Bidenko, Pavlo; et al, IEEE ELECTRON DEVICE LETTERS, v.43, no.11, pp.1834 - 1837, 2022-11

    5
    High-sensitivity waveguide-integrated bolometer based on free-carrier absorption for Si photonic sensors

    Shim, Joonsup; Lim, Jinha; Geum, Dae-Myeong; et al, OPTICS EXPRESS, v.30, no.23, pp.42663 - 42677, 2022-11

    6
    Heterogeneous and Monolithic 3D Integration Technology for Mixed-Signal ICs

    Jeong, Jaeyong; Geum, Dae-Myeong; Kim, SangHyeonresearcher, ELECTRONICS, v.11, no.19, 2022-10

    7
    Oxygen scavenging of HfZrO2-based capacitors for improving ferroelectric properties

    Kim, Bong Ho; Kuk, Song-hyeon; Kim, Seong Kwang; et al, NANOSCALE ADVANCES, v.4, no.19, pp.4114 - 4121, 2022-09

    8
    Atomic-scale mapper for superlattice photodetectors analysis

    Bidenko, Pavlo; Ahn, Seungyeop; Kang, Ko-Ku; et al, OPTICS EXPRESS, v.30, no.15, pp.27868 - 27883, 2022-07

    9
    Heterogeneous and Monolithic 3D Integration of III-V-Based Radio Frequency Devices on Si CMOS Circuits

    Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; et al, ACS NANO, v.16, no.6, pp.9031 - 9040, 2022-06

    10
    Monolithic GaAs/Si V-groove depletion-type optical phase shifters integrated in a 300 mm Si photonics platform

    Kim, Younghyun; Yudistira, Didit; Kunert, Bernardette; et al, PHOTONICS RESEARCH, v.10, no.6, pp.1509 - 1516, 2022-06

    11
    An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode

    Kuk, Song-Hyeon; Han, Seung-Min; Kim, Bong Ho; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.4, pp.2080 - 2087, 2022-04

    12
    Understanding the Sidewall Passivation Effects in AlGaInP/GaInP Micro-LED

    Park, Juhyuk; Baek, Woojin; Geum, Dae-Myeong; et al, NANOSCALE RESEARCH LETTERS, v.17, no.1, 2022-03

    13
    Mnemonic-Opto-Synaptic Transistor for In-sensor Vision System

    Han, Joon-Kyu; Chung, Young-Woo; Sim, Jaeho; et al, SCIENTIFIC REPORTS, v.12, no.1, 2022-02

    14
    Broadband Au/n-GaSb Schottky photodetector array with a spectral range from 300 nm to 1700nm

    Jang, Junho; Geum, Dae-Myeong; Kim, SangHyeonresearcher, OPTICS EXPRESS, v.29, no.23, pp.38894 - 38903, 2021-11

    15
    Comparative advantages of a type-II superlattice barrier over an AIGaSb barrier for enhanced performance of InAs/GaSb LWIR nBn photodetectors

    Lee, Hyun-Jin; Jang, Ahreum; Kim, Young Ho; et al, OPTICS LETTERS, v.46, no.16, pp.3877 - 3880, 2021-08

    16
    Analysis of temperature-dependent I-V characteristics of the Au/n-GaSb Schottky diode

    Jang, Junho; Song, Jaeman; Lee, Seung-Seobresearcher; et al, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.131, 2021-08

    17
    Electrical Analysis for Wafer-Bonded Interfaces of p(+)GaAs/n(+)InGaAs and p(+)InGaAs/n(+)InGaAs

    Geum, Dae-Myeong; Kim, Seong Kwang; Lim, Hyeong-Rak; et al, IEEE ELECTRON DEVICE LETTERS, v.42, no.6, pp.800 - 803, 2021-06

    18
    Tailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film for integrated optical gas sensors

    Shim, Joonsup; Lim, Jinha; Geum, Dae-Myeong; et al, OPTICS EXPRESS, v.29, no.12, pp.18037 - 18058, 2021-06

    19
    Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A Review

    Kim, Younghyun; Han, Jae-Hoon; Ahn, Daehwan; et al, MICROMACHINES, v.12, no.6, 2021-06

    20
    Stackable InGaAs-on-Insulator HEMTs for Monolithic 3-D Integration

    Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.5, pp.2205 - 2211, 2021-05
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