DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ryu, Byungki | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-03-11T18:38:19Z | - |
dc.date.available | 2013-03-11T18:38:19Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-12 | - |
dc.identifier.citation | PHYSICA B-CONDENSED MATTER, v.404, no.23-24, pp.4823 - 4826 | - |
dc.identifier.issn | 0921-4526 | - |
dc.identifier.uri | http://hdl.handle.net/10203/99939 | - |
dc.description.abstract | We investigate the atomic structure of the interface between crystalline ZnO and amorphous HfO2 (a-HfO2) and the electronic properties of oxygen vacancy (V-O) near the interface through first-principles density-functional calculations. From the band alignment of ZnO/a-HfO2 interfaces, the conduction band offset is estimated to be 2.14-2.39 eV, while the potential barrier for hole conduction is nearly zero. The defect level of V-O is higher in gate oxide than in ZnO. As V-O behaves as a charge trap center in gate oxide, this defect can cause threshold voltage instability, while it does not in the ZnO region. (C) 2009 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | SEMICONDUCTOR | - |
dc.title | The electronic properties of the interface structure between ZnO and amorphous HfO2 | - |
dc.type | Article | - |
dc.identifier.wosid | 000276029300089 | - |
dc.identifier.scopusid | 2-s2.0-74349114948 | - |
dc.type.rims | ART | - |
dc.citation.volume | 404 | - |
dc.citation.issue | 23-24 | - |
dc.citation.beginningpage | 4823 | - |
dc.citation.endingpage | 4826 | - |
dc.citation.publicationname | PHYSICA B-CONDENSED MATTER | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | Interface | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | HfO2 | - |
dc.subject.keywordAuthor | O-vacancy | - |
dc.subject.keywordAuthor | First-principles calculations | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | GAS | - |
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