Atomic Structure and Diffusion of Hydrogen in ZnO

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dc.contributor.authorBang, Junhyeokko
dc.contributor.authorChang, Kee-Jooko
dc.date.accessioned2013-03-11T18:30:00Z-
dc.date.available2013-03-11T18:30:00Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2009-07-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, pp.98 - 102-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/10203/99913-
dc.description.abstractUsing first-principles theoretical calculations, we investigate the atomic structure and the diffusion pathway and barrier of hydrogen in ZnO. We find that an interstitial H is energetically more stable at a bond-centered position than at an anti-bonding site of an O atom. We examine the stable geometry of a defect complex consisting of hydrogen and a Zn vacancy and find that the O-H bond is oriented along the c-axis in the wurtzite structure. The energy barrier for the migration of an interstitial H is around 0.4 - 0.5 eV while that for a substitutional H at an O site is about 1.7 eV, indicating that the substitutional H is thermally more stable. Kinetic Monte Carlo simulations confirm that the substitutional H diffuses Out at annealing temperatures higher than that for the interstitial H.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectP-TYPE ZNO-
dc.subjectPULSED-LASER DEPOSITION-
dc.subjectGROUP-I ELEMENTS-
dc.subjectTHIN-FILMS-
dc.subjectELECTRICAL-PROPERTIES-
dc.subjectDOPANT-
dc.subjectTEMPERATURE-
dc.subjectFABRICATION-
dc.subjectMGXZN1-XO-
dc.subjectEMISSION-
dc.titleAtomic Structure and Diffusion of Hydrogen in ZnO-
dc.typeArticle-
dc.identifier.wosid000268023600023-
dc.identifier.scopusid2-s2.0-69249166025-
dc.type.rimsART-
dc.citation.volume55-
dc.citation.beginningpage98-
dc.citation.endingpage102-
dc.citation.publicationnameJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.localauthorChang, Kee-Joo-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorZnO-
dc.subject.keywordAuthorHydrogen-
dc.subject.keywordAuthorn-type conductivity-
dc.subject.keywordAuthorElectronic structure-
dc.subject.keywordPlusP-TYPE ZNO-
dc.subject.keywordPlusPULSED-LASER DEPOSITION-
dc.subject.keywordPlusGROUP-I ELEMENTS-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusDOPANT-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusFABRICATION-
dc.subject.keywordPlusMGXZN1-XO-
dc.subject.keywordPlusEMISSION-
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