DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, W. -J. | ko |
dc.contributor.author | Ryu, B. | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-03-11T18:29:43Z | - |
dc.date.available | 2013-03-11T18:29:43Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-12 | - |
dc.identifier.citation | PHYSICA B-CONDENSED MATTER, v.404, no.23-24, pp.4794 - 4796 | - |
dc.identifier.issn | 0921-4526 | - |
dc.identifier.uri | http://hdl.handle.net/10203/99912 | - |
dc.description.abstract | We perform first-principles theoretical calculations to investigate the defect properties of oxygen vacancy (V-O) in crystalline InGaO3(ZnO)(m) (m = 3). In a flat boundary structure, in which Ga atoms are located on a single plane, various configurations of V-O exist. We find that neutral V-O at a site near the In-O layer or in the ZnO area is energetically more favorable than those formed near and on the Ga-O layer. Although the defect levels vary with the type of metal ions in the neighborhood, V-O defects act as deep donors, similar to that of bulk ZnO. Moreover, the O-vacancies exhibit the negative-U behavior, with the charge transition levels well below the conduction band minimum. (C) 2009 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | TRANSPARENT OXIDE SEMICONDUCTOR | - |
dc.subject | AUGMENTED-WAVE METHOD | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | ZINC-OXIDE | - |
dc.subject | ENERGY | - |
dc.title | Electronic structure of oxygen vacancy in crystalline InGaO3(ZnO)(m) | - |
dc.type | Article | - |
dc.identifier.wosid | 000276029300080 | - |
dc.identifier.scopusid | 2-s2.0-74349110496 | - |
dc.type.rims | ART | - |
dc.citation.volume | 404 | - |
dc.citation.issue | 23-24 | - |
dc.citation.beginningpage | 4794 | - |
dc.citation.endingpage | 4796 | - |
dc.citation.publicationname | PHYSICA B-CONDENSED MATTER | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | Oxygen vacancy | - |
dc.subject.keywordAuthor | IGZO | - |
dc.subject.keywordAuthor | Electronic structure | - |
dc.subject.keywordAuthor | First-principles | - |
dc.subject.keywordPlus | TRANSPARENT OXIDE SEMICONDUCTOR | - |
dc.subject.keywordPlus | AUGMENTED-WAVE METHOD | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | ZINC-OXIDE | - |
dc.subject.keywordPlus | ENERGY | - |
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