Exchangeable self-curable liquid gate dielectric embedded field effect transistor

Abstract

A traditional solid-state gate dielectric is replaced with a liquid-state gate dielectric. Whereas the traps are immobile and localized in the silicon dioxide, the fluidity of oil allows the redistribution of traps. The resistance to a stress induced leakage and dielectric breakdown is enhanced. The trapped charges induced by hot-carrier injection are removed when the damaged oil is exchanged. Furthermore, a transistor that suffers radiation damage is revived by an exchangeable gate dielectric. This capability has potential application in radio astronomy, biomedical imaging, and nuclear industry. The reconfigurable oil can also serve as a coolant to alleviate heat concentration of transistor. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3466912]