DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Kun-Rok | ko |
dc.contributor.author | Min, Byoung-Chul | ko |
dc.contributor.author | Park, Youn-Ho | ko |
dc.contributor.author | Lee, Hun-Sung | ko |
dc.contributor.author | Park, Chang-Yup | ko |
dc.contributor.author | Jo, Young-Hun | ko |
dc.contributor.author | Shin, Sung-Chul | ko |
dc.date.accessioned | 2013-03-11T15:54:34Z | - |
dc.date.available | 2013-03-11T15:54:34Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2011-10 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.99, no.16 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/99530 | - |
dc.description.abstract | We have investigated the temperature and bias dependence of the Hanle effect in a composite n-type Ge system consisting of a heavily doped surface layer and a moderately doped Ge substrate, using three-terminal Hanle measurements. A large spin signal of similar to 5.1 k Omega mu m(2) and a spin lifetime of similar to 105 ps are obtained at 300 K. The spin signal, spin lifetime, and their asymmetries with respect to the bias polarity have been measured over a temperature range from 5 K to 300 K. Intriguingly, an inverted Hanle effect, indicating the sign inversion of spin polarization in Ge, is observed at low temperature. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3648107] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | SPIN-INJECTION | - |
dc.subject | TRANSPORT | - |
dc.subject | SILICON | - |
dc.title | Temperature and bias dependence of Hanle effect in CoFe/MgO/composite Ge | - |
dc.type | Article | - |
dc.identifier.wosid | 000296517600039 | - |
dc.identifier.scopusid | 2-s2.0-80155187599 | - |
dc.type.rims | ART | - |
dc.citation.volume | 99 | - |
dc.citation.issue | 16 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.contributor.localauthor | Shin, Sung-Chul | - |
dc.contributor.nonIdAuthor | Min, Byoung-Chul | - |
dc.contributor.nonIdAuthor | Park, Youn-Ho | - |
dc.contributor.nonIdAuthor | Jo, Young-Hun | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | cobalt alloys | - |
dc.subject.keywordAuthor | composite materials | - |
dc.subject.keywordAuthor | contact resistance | - |
dc.subject.keywordAuthor | elemental semiconductors | - |
dc.subject.keywordAuthor | germanium | - |
dc.subject.keywordAuthor | Hanle effect | - |
dc.subject.keywordAuthor | heavily doped semiconductors | - |
dc.subject.keywordAuthor | iron alloys | - |
dc.subject.keywordAuthor | magnesium compounds | - |
dc.subject.keywordAuthor | spin polarised transport | - |
dc.subject.keywordPlus | SPIN-INJECTION | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | SILICON | - |
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