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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Mechanism of atomic layer deposition of SiO2 on the silicon (100)-2x1 surface using SiCl4 and H2O as precursors Kang, Jeung Ku; Musgrave, CB, JOURNAL OF APPLIED PHYSICS, v.91, no.5, pp.3408 - 3414, 2002-03 |
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