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NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
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Mechanism of atomic layer deposition of SiO2 on the silicon (100)-2x1 surface using SiCl4 and H2O as precursors Kang, Jeung Ku; Musgrave, CB, JOURNAL OF APPLIED PHYSICS, v.91, no.5, pp.3408 - 3414, 2002-03 | |
The effect of an electric field on the chemical vapour deposition of (100) diamond Kang, Jeung Ku; Musgrave, CB, NANOTECHNOLOGY, v.12, no.3, pp.258 - 264, 2001-09 | |
A theoretical study of the chemical vapor deposition of (100) diamond: An explanation for the slow growth of the (100) surface Kang, Jeung Ku; Musgrave, CB, JOURNAL OF CHEMICAL PHYSICS, v.113, no.17, pp.7582 - 7587, 2000-11 | |
A quantum chemical study of the self-directed growth mechanism of styrene and propylene molecular nanowires on the silicon (100) 2X1 surface Kang, Jeung Ku; Musgrave, CB, JOURNAL OF CHEMICAL PHYSICS, v.116, no.22, pp.9907 - 9913, 2002-06 |
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