Browse "EEW-Journal Papers(저널논문)" by Subject 30 nm gate
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| Fabrication and process simulation of SOI MOSFETs with a 30-nm gate length Cho, WJ; Yang, JH; Im, K; Oh, Jihun; Lee, S; Parr, K, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.43, no.5, pp.892 - 897, 2003-11 |
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