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1
Characteristics of erbium-silicided n-type Schottky barrier tunnel transistors

Jang, M; Oh, Jihun; Maeng, S; Cho, W; Lee, S; Kang, K; Park, K, APPLIED PHYSICS LETTERS, v.83, no.13, pp.2611 - 2613, 2003-09

2
Defect-free ultra-shallow source/drain extension using spin-on-dopants for deep submicron SOI MOSFET applications

Yang, JH; Oh, Jihun; Cho, WJ; Lee, SJ; Im, KJ; Park, K, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.44, no.2, pp.423 - 426, 2004-02

3
Ultra shallow and abrupt n(+)-p junction formations on silicon-on-insulator by solid phase diffusion of arsenic from spin-on-dopant for sub 50 nm Si metal-oxide-semiconductor devices

Oh, Jihun; Im, K; Ahn, CG; Yang, JH; Cho, WJ; Lee, S; Park, K, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.110, no.2, pp.185 - 189, 2004-07

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