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Showing results 1 to 9 of 9

1
A quantum chemical study of the self-directed growth mechanism of styrene and propylene molecular nanowires on the silicon (100) 2X1 surface

Kang, Jeung Ku; Musgrave, CB, JOURNAL OF CHEMICAL PHYSICS, v.116, no.22, pp.9907 - 9913, 2002-06

2
A theoretical study of the chemical vapor deposition of (100) diamond: An explanation for the slow growth of the (100) surface

Kang, Jeung Ku; Musgrave, CB, JOURNAL OF CHEMICAL PHYSICS, v.113, no.17, pp.7582 - 7587, 2000-11

3
Hydrogen abstraction from a diamond(111) surface in a uniform electric field

Ricca, A; Bauschlicher, CW; Kang, Jeung Ku; Musgrave, CB, SURFACE SCIENCE, v.429, no.1-3, pp.199 - 205, 1999-06

4
Mechanism of atomic layer deposition of SiO2 on the silicon (100)-2x1 surface using SiCl4 and H2O as precursors

Kang, Jeung Ku; Musgrave, CB, JOURNAL OF APPLIED PHYSICS, v.91, no.5, pp.3408 - 3414, 2002-03

5
Quantum simulations for computational prototyping of nanofabrication.

Musgrave, CB; Han, JH; Widjaja, Y; Mui, C; Bent, SF; Kang, Jeung Ku, ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, v.225, pp.748 - 1, 2003-03

6
Surface reaction mechanisms for atomic layer deposition of silicon nitride

Mui, C; Widjaja, Y; Kang, Jeung Ku; Musgrave, CB, SURFACE SCIENCE, v.557, no.1-3, pp.159 - 170, 2004-05

7
The effect of an electric field on the chemical vapour deposition of (100) diamond

Kang, Jeung Ku; Musgrave, CB, NANOTECHNOLOGY, v.12, no.3, pp.258 - 264, 2001-09

8
The mechanism of HF/H2O chemical etching of SiO2

Kang, Jeung Ku; Musgrave, CB, JOURNAL OF CHEMICAL PHYSICS, v.116, no.1, pp.275 - 280, 2002-01

9
Theoretical study of the chemical vapor deposition of (100) silicon from silane

Kang, Jeung Ku; Musgrave, CB, PHYSICAL REVIEW B, v.64, no.24, 2001-12

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