Browse "Graduate school of EEWS(EEWS대학원)" by Author Lee, S
Showing results 1 to 7 of 7
| Characteristics of erbium-silicided n-type Schottky barrier tunnel transistors Jang, M; Oh, Jihun; Maeng, S; Cho, W; Lee, S; Kang, K; Park, K, APPLIED PHYSICS LETTERS, v.83, no.13, pp.2611 - 2613, 2003-09 |
| Characteristics of solid-phase diffused ultra-shallow junction using phosphorus doped silicon oxide films for fabrication of sub-100 nm SOI MOSFET Cho, WJ; Im, K; Yang, JH; Oh, Jihun; Lee, S, JOURNAL OF MATERIALS SCIENCE, v.39, no.5, pp.1819 - 1821, 2004-03 |
| Electrically driven phase transition in magnetite nanostructures Lee, S; Fursina, A; Mayo, JT; Yavuz, Cafer T; Colvin, VL; Sofin, RGS; Shvets, IV; et al, NATURE MATERIALS, v.7, no.2, pp.130 - 133, 2008-02 |
| Fabrication and process simulation of SOI MOSFETs with a 30-nm gate length Cho, WJ; Yang, JH; Im, K; Oh, Jihun; Lee, S; Parr, K, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.43, no.5, pp.892 - 897, 2003-11 |
| Fabrication of 50-nm gate SOI n-MOSFETs using novel plasma-doping technique Cho, WJ; Ahn, CG; Im, KJ; Yang, JH; Oh, Jihun; Baek, IB; Lee, S, IEEE ELECTRON DEVICE LETTERS, v.25, no.6, pp.366 - 368, 2004-06 |
| Growth of Metal Oxide Nanowires from Supercooled Liquid Nanodroplets Kim, MH; Lee, B; Lee, S; Larson, C; Baik, JM; Yavuz, Cafer T; Seifert, S; et al, NANO LETTERS, v.9, no.12, pp.4138 - 4146, 2009-12 |
| Ultra shallow and abrupt n(+)-p junction formations on silicon-on-insulator by solid phase diffusion of arsenic from spin-on-dopant for sub 50 nm Si metal-oxide-semiconductor devices Oh, Jihun; Im, K; Ahn, CG; Yang, JH; Cho, WJ; Lee, S; Park, K, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.110, no.2, pp.185 - 189, 2004-07 |
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