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Defect-free ultra-shallow source/drain extension using spin-on-dopants for deep submicron SOI MOSFET applications Yang, JH; Oh, Jihun; Cho, WJ; Lee, SJ; Im, KJ; Park, K, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.44, no.2, pp.423 - 426, 2004-02 |
Fabrication of 50-nm gate SOI n-MOSFETs using novel plasma-doping technique Cho, WJ; Ahn, CG; Im, KJ; Yang, JH; Oh, Jihun; Baek, IB; Lee, S, IEEE ELECTRON DEVICE LETTERS, v.25, no.6, pp.366 - 368, 2004-06 |
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