Structural and stimulated emission characteristics of diameter-controlled ZnO nanowires using buffer structure

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The diameter of ZnO nanowires grown by chemical vapour deposition was controlled by employing CrN buffer structures on the c-Al(2)O(3) substrate. The nanosized CrN islands with different morphologies were prepared by nitridation of thickness-controlled Cr film in NH(3) atmosphere. The ZnO nanowires grew normal to the surface of the CrN/c-Al(2)O(3) templates due to reduction in the lattice mismatch between ZnO and c-Al(2)O(3) by the CrN buffer layer. Investigation of the interface between CrN and ZnO by high resolution transmission electron microscopy revealed the presence of reactive layers such as ZnCr(2)O(4) and Cr(2)O(3). The diameter of nanowires significantly affected their stimulated emission characteristics. At room temperature, the threshold intensity for stimulated emission increased from 35 to above 500kW cm(-2) as the diameter of ZnO nanowires decreases from 223 to 77 nm. This dependence of threshold intensity for stimulated emission from nanowires is caused by an increase in the surface recombination and/or enhanced leakage of optical field in narrower nanowires.
Publisher
IOP PUBLISHING LTD
Issue Date
2009-11
Language
English
Article Type
Article
Keywords

ROOM-TEMPERATURE; CARBON NANOTUBE; NANOROD ARRAYS; ORDERED ARRAYS; TRANSISTOR; GROWTH; LASERS

Citation

JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.22

ISSN
0022-3727
DOI
10.1088/0022-3727/42/22/225403
URI
http://hdl.handle.net/10203/98253
Appears in Collection
MS-Journal Papers(저널논문)
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