Room-Temperature Ferromagnetic Ga(1-x)MnAs (x <= 0.05) Nanowires: Dependence of Electronic Structures and Magnetic Properties on Mn Content

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Ga1-xMnxAs nanowires were synthesized with finely controlled Mn contents (x = 0, 0.01, 0.02, 0.03, and 0.05) by the vapor transport method. They consisted of single-crystalline GaAs nanocrystals (avg. diameter = 60 nm) grown along the [111] direction. The Mn doping decreases the lattice constant, most significantly at x approximate to 0.03. X-ray pholoelectron spectroscopy revealed that as the Mn content increases, the binding energy of Ga 2p shifts to a higher energy, which can be correlated with the hybridization between the Mn2+ ions and the holes. X-ray absorption spectroscopy and X-ray magnetic circular dichroism confirmed that the Mn2+ ions substitute into the tetrahedrally coordinated Ga sites and that the magnetic moment is maximized at x = 0.03, where the lattice constant is minimized and the binding energy of Ga 2p is maximized. The magnetization measurement revealed that all of these nanowires exhibited room-temperature ferromagnetic behavior, which is also observed most significantly for x approximate to 0.03.
Publisher
AMER CHEMICAL SOC
Issue Date
2009-03
Language
English
Article Type
Article
Keywords

SEMICONDUCTOR; GAAS; (GA,MN)AS; SPINTRONICS; INJECTION; GROWTH

Citation

CHEMISTRY OF MATERIALS, v.21, no.6, pp.1137 - 1143

ISSN
0897-4756
URI
http://hdl.handle.net/10203/98071
Appears in Collection
CH-Journal Papers(저널논문)
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