Investigation of nonpolar (1 1 (2)over-bar 0) a-plane ZnO films grown under various Zn/O ratios by plasma-assisted molecular beam epitaxy

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Structural and optical properties of nonpolar a-plane ZnO films grown with different II/VI ratios on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy were investigated. Even by increasing the II/VI ratio across the stoichiometric flux condition a consistent surface morphology of striated stripes along the ZnO < 0 0 0 1> direction without any pit formation was observed, which is contrary to polar c-plane ZnO films. Root mean square surface roughness, full width at half maximum values of X-ray rocking curves, defect densities, and photoluminescence were changed with the II/VI ratio. The sample grown with stoichiometric flux condition showed the lowest value of rms roughness, the smallest threading dislocation and stacking fault densities of similar to 4.7 x 10(8) cm(-2) and similar to 9.5 x 10(4) cm(-1), respectively, and the highest intensity of D X peak. These results imply that the stoichiometric flux growth condition is suitable to obtain superior structural and optical properties compared to other flux conditions. (C) 2010 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2010-07
Language
English
Article Type
Article
Keywords

HOMOEPITAXIAL GROWTH; 11(2)OVER-BAR-0 FILMS; THIN-FILMS; SAPPHIRE; GAN; DIODES; LAYER

Citation

JOURNAL OF CRYSTAL GROWTH, v.312, no.15, pp.2196 - 2200

ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2010.04.056
URI
http://hdl.handle.net/10203/97859
Appears in Collection
MS-Journal Papers(저널논문)
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