Infrared-Active Heterostructured Nanocrystals with Ultra long Carrier Lifetimes

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dc.contributor.authorLee, DohChangko
dc.contributor.authorRobel, Iko
dc.contributor.authorPietryga, JMko
dc.contributor.authorKlimov, VIko
dc.date.accessioned2013-03-09T21:47:25Z-
dc.date.available2013-03-09T21:47:25Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2010-07-
dc.identifier.citationJOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.132, no.29, pp.9960 - 9962-
dc.identifier.issn0002-7863-
dc.identifier.urihttp://hdl.handle.net/10203/97558-
dc.description.abstractWe present the synthesis of composite PbSe/CdSe/ CdS nanocrystals with two distinct geometries: core/shell/shell structures and tetrapods. These novel nanostructures exhibit extremely long carrier decay times up to 20 mu s that are combined with high emission efficiencies in the infrared. The increase in carrier lifetimes is attributed to the reduction of the electron-hole overlap as a result of delocalization of the electron wave function into the outer CdS shell or arms. The ultralong carrier lifetimes and controlled geometry render these nanocrystals attractive for a variety of applications from lasing to photocatalysis and photovoltaics.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectSEMICONDUCTOR NANOCRYSTALS-
dc.subjectCDSE-
dc.subjectGROWTH-
dc.titleInfrared-Active Heterostructured Nanocrystals with Ultra long Carrier Lifetimes-
dc.typeArticle-
dc.identifier.wosid000280227700011-
dc.type.rimsART-
dc.citation.volume132-
dc.citation.issue29-
dc.citation.beginningpage9960-
dc.citation.endingpage9962-
dc.citation.publicationnameJOURNAL OF THE AMERICAN CHEMICAL SOCIETY-
dc.identifier.doi10.1021/ja102716p-
dc.contributor.localauthorLee, DohChang-
dc.contributor.nonIdAuthorRobel, I-
dc.contributor.nonIdAuthorPietryga, JM-
dc.contributor.nonIdAuthorKlimov, VI-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSEMICONDUCTOR NANOCRYSTALS-
dc.subject.keywordPlusCDSE-
dc.subject.keywordPlusGROWTH-
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