Optical activation of Si nanowires using Er-doped, sol-gel derived silica

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dc.contributor.authorSuh, Kiseokko
dc.contributor.authorShin, JungHoonko
dc.contributor.authorPark, Oun-Hoko
dc.contributor.authorBae, Byeong-Sooko
dc.contributor.authorLee, Jung-Chulko
dc.contributor.authorChoi, Heon-Jinko
dc.date.accessioned2009-06-23T09:08:09Z-
dc.date.available2009-06-23T09:08:09Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-01-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.86, no.5, pp.169 - 174-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/9703-
dc.description.abstractOptical activation of Si nanowires (Si-NWs) using sol-gel derived Er-doped silica is investigated. Si-NWs of about 100 nm diameter were grown on Si substrates by the vapor-liquid-solid method using An catalysts and H-2 diluted SiCl4. Afterwards, Er-doped silica sol-gel solution was spin-coated, and annealed at 950degreesC in flowing N-2/O-2 environment. Such Er-doped silica/Si-NWs nanocomposite is found to combine the advantages of crystalline Si and silica to simultaneously achieve both high carrier-mediated excitation efficiency and high Er3+ luminescence efficiency while at the same time providing high areal density of Er3+ and easy current injection, indicating the possibility of developing sol-gel activated Si-NWs as a material platform for Si-based photonics. (C) 2005 American Institute of Physics.-
dc.description.sponsorshipThis work was supported in part by NRL project by MOST in Korea.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherAMER INST PHYSICS-
dc.subjectMU-M-
dc.subjectENERGY-TRANSFER-
dc.subjectPOROUS SILICON-
dc.subjectWAVE-GUIDE-
dc.subjectERBIUM-
dc.subjectLUMINESCENCE-
dc.subjectELECTROLUMINESCENCE-
dc.subjectNANOCRYSTALS-
dc.subjectDEEXCITATION-
dc.subjectEXCITATION-
dc.titleOptical activation of Si nanowires using Er-doped, sol-gel derived silica-
dc.typeArticle-
dc.identifier.wosid000227144700040-
dc.identifier.scopusid2-s2.0-18644386422-
dc.type.rimsART-
dc.citation.volume86-
dc.citation.issue5-
dc.citation.beginningpage169-
dc.citation.endingpage174-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.1857072-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorShin, JungHoon-
dc.contributor.localauthorBae, Byeong-Soo-
dc.contributor.nonIdAuthorSuh, Kiseok-
dc.contributor.nonIdAuthorPark, Oun-Ho-
dc.contributor.nonIdAuthorLee, Jung-Chul-
dc.contributor.nonIdAuthorChoi, Heon-Jin-
dc.type.journalArticleArticle-
dc.subject.keywordPlusMU-M-
dc.subject.keywordPlusENERGY-TRANSFER-
dc.subject.keywordPlusPOROUS SILICON-
dc.subject.keywordPlusWAVE-GUIDE-
dc.subject.keywordPlusERBIUM-
dc.subject.keywordPlusLUMINESCENCE-
dc.subject.keywordPlusELECTROLUMINESCENCE-
dc.subject.keywordPlusNANOCRYSTALS-
dc.subject.keywordPlusDEEXCITATION-
dc.subject.keywordPlusEXCITATION-
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