DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, Jin-Woo | ko |
dc.contributor.author | Ryu, Seong-Wan | ko |
dc.contributor.author | Kim, Dong-Hyun | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2013-03-09T17:32:55Z | - |
dc.date.available | 2013-03-09T17:32:55Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-03 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.3, pp.601 - 607 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/97004 | - |
dc.description.abstract | Unified random access memory (URAM) with a separated double-gate is demonstrated on a fully depleted polysilicon (poly-Si) thin-film-transistor (TFT) template. Integration of a front-gate dielectric of tunneling oxide/nitride/control oxide (O/N/O) and a floating poly-Si channel provides the two versatile functions of nonvolatile silicon oxide-nitride oxide-semiconductor Flash memory and high-speed capacitorless single-transistor 1T-DRAM in a single transistor. In this design, the memory mode of URAM is selected according to user specifications. As the back-channel is assigned for capacitorless 1T-DRAM while the front-channel is devoted for Flash memory, spatial separation minimizes undesired soft programming in the front O/N/O layer and allows for capacitorless 1T-DRAM operation irrespective of the data state of the nonvolatile memory. This feature presents interference-free operation between the two modes. In addition, the virtue of the TFT process allows the potential for stackable memory for ultra-high-density era. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | URAM | - |
dc.subject | NVM | - |
dc.title | Polysilicon Channel TFT With Separated Double-Gate for Unified RAM (URAM)Unified Function for Nonvolatile SONOS Flash and High-Speed Capacitorless 1T-DRAM | - |
dc.type | Article | - |
dc.identifier.wosid | 000274993100008 | - |
dc.identifier.scopusid | 2-s2.0-77649191261 | - |
dc.type.rims | ART | - |
dc.citation.volume | 57 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 601 | - |
dc.citation.endingpage | 607 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2009.2038584 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Ryu, Seong-Wan | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Capacitorless 1T-DRAM | - |
dc.subject.keywordAuthor | Flash memory | - |
dc.subject.keywordAuthor | nonvolatile memory (NVM) | - |
dc.subject.keywordAuthor | separated double-gate | - |
dc.subject.keywordAuthor | silicon oxide-nitride oxide-semiconductor (SONOS) | - |
dc.subject.keywordAuthor | thin-film transistor (TFT) | - |
dc.subject.keywordAuthor | unified random access memory (URAM) | - |
dc.subject.keywordPlus | URAM | - |
dc.subject.keywordPlus | NVM | - |
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