DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Sung-Jin | ko |
dc.contributor.author | Han, Jin-Woo | ko |
dc.contributor.author | Kim, Chung-Jin | ko |
dc.contributor.author | Kim, Sung-Ho | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2013-03-09T16:22:05Z | - |
dc.date.available | 2013-03-09T16:22:05Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-12 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.12, pp.3228 - 3231 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/96848 | - |
dc.description.abstract | A novel initialization concept is demonstrated to improve the program efficiency of the 1T-DRAM mode of unified random access memory (URAM). The proposed method involves boosting the gate-induced drain leakage current for the generation of excess holes by pretrapping electrons to the nitride layer prior to the activation of 1T-DRAM mode. The proposed initialization concept doubles the current sensing window in 1T-DRAM operation. Due to the potential for soft erasing caused by hot-hole injections into electrons that are trapped in the nitride during the P/E cycling of 1T-DRAM, immunity against soft erasing is confirmed through a dc stress measurement as well. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | NONVOLATILE MEMORY | - |
dc.subject | URAM | - |
dc.title | Improvement of the Sensing Window on a Capacitorless 1T-DRAM of a FinFET-Based Unified RAM | - |
dc.type | Article | - |
dc.identifier.wosid | 000271951700046 | - |
dc.identifier.scopusid | 2-s2.0-84857175363 | - |
dc.type.rims | ART | - |
dc.citation.volume | 56 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 3228 | - |
dc.citation.endingpage | 3231 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2009.2033011 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Capacitorless DRAM | - |
dc.subject.keywordAuthor | embedded memory | - |
dc.subject.keywordAuthor | gate-induced drain leakage (GIDL) | - |
dc.subject.keywordAuthor | GIDL program | - |
dc.subject.keywordAuthor | soft erasing | - |
dc.subject.keywordAuthor | SONOS | - |
dc.subject.keywordAuthor | unified random access memory (URAM) | - |
dc.subject.keywordAuthor | 1T-DRAM | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY | - |
dc.subject.keywordPlus | URAM | - |
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