Fullerene-Derivative-Embedded Nanogap Field-Effect-Transistor and Its Nonvolatile Memory Application

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dc.contributor.authorRyu, Seong-Wanko
dc.contributor.authorKim, Chung-Jinko
dc.contributor.authorKim, Sung-Hoko
dc.contributor.authorSeo, Myung-Sooko
dc.contributor.authorYun, Chang-Hunko
dc.contributor.authorYoo, Seung-Hyupko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2013-03-09T15:53:38Z-
dc.date.available2013-03-09T15:53:38Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2010-08-
dc.identifier.citationSMALL, v.6, no.15, pp.1617 - 1621-
dc.identifier.issn1613-6810-
dc.identifier.urihttp://hdl.handle.net/10203/96787-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectSURFACE-
dc.subjectNROM-
dc.titleFullerene-Derivative-Embedded Nanogap Field-Effect-Transistor and Its Nonvolatile Memory Application-
dc.typeArticle-
dc.identifier.wosid000281060600008-
dc.identifier.scopusid2-s2.0-77955224059-
dc.type.rimsART-
dc.citation.volume6-
dc.citation.issue15-
dc.citation.beginningpage1617-
dc.citation.endingpage1621-
dc.citation.publicationnameSMALL-
dc.identifier.doi10.1002/smll.200902410-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorYoo, Seung-Hyup-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorcapillary filling-
dc.subject.keywordAuthornanofluidics-
dc.subject.keywordAuthornanogap field-effect transistor-
dc.subject.keywordAuthornonvolatile memory-
dc.subject.keywordAuthorPCBM-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordPlusNROM-
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