DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ryu, Seong-Wan | ko |
dc.contributor.author | Kim, Chung-Jin | ko |
dc.contributor.author | Kim, Sung-Ho | ko |
dc.contributor.author | Seo, Myung-Soo | ko |
dc.contributor.author | Yun, Chang-Hun | ko |
dc.contributor.author | Yoo, Seung-Hyup | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2013-03-09T15:53:38Z | - |
dc.date.available | 2013-03-09T15:53:38Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-08 | - |
dc.identifier.citation | SMALL, v.6, no.15, pp.1617 - 1621 | - |
dc.identifier.issn | 1613-6810 | - |
dc.identifier.uri | http://hdl.handle.net/10203/96787 | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | SURFACE | - |
dc.subject | NROM | - |
dc.title | Fullerene-Derivative-Embedded Nanogap Field-Effect-Transistor and Its Nonvolatile Memory Application | - |
dc.type | Article | - |
dc.identifier.wosid | 000281060600008 | - |
dc.identifier.scopusid | 2-s2.0-77955224059 | - |
dc.type.rims | ART | - |
dc.citation.volume | 6 | - |
dc.citation.issue | 15 | - |
dc.citation.beginningpage | 1617 | - |
dc.citation.endingpage | 1621 | - |
dc.citation.publicationname | SMALL | - |
dc.identifier.doi | 10.1002/smll.200902410 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Yoo, Seung-Hyup | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | capillary filling | - |
dc.subject.keywordAuthor | nanofluidics | - |
dc.subject.keywordAuthor | nanogap field-effect transistor | - |
dc.subject.keywordAuthor | nonvolatile memory | - |
dc.subject.keywordAuthor | PCBM | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | NROM | - |
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