Performance Improvement of N-Type TiOx Active-Channel TFTs Grown by Low-Temperature Plasma-Enhanced ALD

Cited 23 time in webofscience Cited 0 time in scopus
  • Hit : 285
  • Download : 0
We report on performance improvement of n-type oxide-semiconductor thin-film transistors (TFTs) based on TiOx active channels grown at 250 degrees C by plasma-enhanced atomic layer deposition. TFTs with as-grown TiOx films exhibited the saturation mobility (mu(sat)) as high as 3.2 cm(2)/V . s but suffered from the low on-off ratio (I-ON/I-OFF) of 2.0 x 10(2). N2O plasma treatment was then attempted to improve I-ON/I-OFF. Upon treatment, the TiOx TFTs exhibited I-ON/I-OFF of 4.7 x 10(5) and mu(sat) of 1.64 cm(2) /V . s, showing a much improved performance balance and, thus, demonstrating their potentials for a wide variety of applications such as backplane technology in active-matrix displays and radio-frequency identification tags.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2009-07
Language
English
Article Type
Article
Keywords

THIN-FILM TRANSISTORS

Citation

IEEE ELECTRON DEVICE LETTERS, v.30, no.7, pp.739 - 741

ISSN
0741-3106
DOI
10.1109/LED.2009.2021587
URI
http://hdl.handle.net/10203/96693
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 23 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0