DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Young-Ha | ko |
dc.contributor.author | Kim, C. -J. | ko |
dc.contributor.author | Jun, B. -H. | ko |
dc.contributor.author | Sung, T. H. | ko |
dc.contributor.author | Han, Y. H. | ko |
dc.contributor.author | Han, S. C | ko |
dc.contributor.author | Paik, Han-Jong | ko |
dc.contributor.author | Yoon, Jae-Sung | ko |
dc.contributor.author | No, Kwang-Soo | ko |
dc.date.accessioned | 2013-03-09T08:23:44Z | - |
dc.date.available | 2013-03-09T08:23:44Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-08 | - |
dc.identifier.citation | PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, v.469, pp.1410 - 1413 | - |
dc.identifier.issn | 0921-4534 | - |
dc.identifier.uri | http://hdl.handle.net/10203/95857 | - |
dc.description.abstract | Rare-earth (RE) (e.g. Sm, Dy, Ce, etc.) doping has been widely investigated to improve critical current density (J(c)) of YBa(2)Cu(3)O(7-X) (YBCO) coated conductors (CC). Oxygen partial pressure is known to be a key parameter in terms of affecting the J(c) of YBCO films. In this work, the effect of oxygen partial pressure on the microstructure and J(c) of a Ce doped YBCO film was examined. Ce doped YBCO films were deposited on (1 0 0) SrTiO(3) (STO) single crystal substrates at oxygen partial pressures of 2.5, 5.0, and 10.0 Torr using a metal organic chemical vapor deposition (MOCVD) method. Due to the enhanced migration of surface adatoms under reduced oxygen partial pressure, a 1 wt% Ce doped YBCO film had a stoichiometric, dense surface. In addition, the zero-field J(c) (at 77 K) of the 1 wt% Ce doped YBCO film deposited at reduced oxygen partial pressure was increased. Irrespective of the amount of Cc, the Ce doped YBCO film showed an increased zero-field J(c) (at 77 K) under reduced oxygen partial pressure. (C) 2009 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | YBA2CU3O7-X THIN-FILMS | - |
dc.subject | INSITU GROWTH | - |
dc.title | Effect of oxygen partial pressure on the morphology and properties of Ce doped YBCO films fabricated by a MOCVD process | - |
dc.type | Article | - |
dc.identifier.wosid | 000270018200140 | - |
dc.identifier.scopusid | 2-s2.0-68249093339 | - |
dc.type.rims | ART | - |
dc.citation.volume | 469 | - |
dc.citation.beginningpage | 1410 | - |
dc.citation.endingpage | 1413 | - |
dc.citation.publicationname | PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | - |
dc.contributor.localauthor | No, Kwang-Soo | - |
dc.contributor.nonIdAuthor | Kim, C. -J. | - |
dc.contributor.nonIdAuthor | Jun, B. -H. | - |
dc.contributor.nonIdAuthor | Sung, T. H. | - |
dc.contributor.nonIdAuthor | Han, Y. H. | - |
dc.contributor.nonIdAuthor | Han, S. C | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | YBCO | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordAuthor | Oxygen partial pressure | - |
dc.subject.keywordAuthor | Ce doping | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | YBA2CU3O7-X THIN-FILMS | - |
dc.subject.keywordPlus | INSITU GROWTH | - |
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