Synthesis of Li4Ti5O12 Thin Film with Inverse Hemispheric Structure

Abstract

Li4Ti5O12 thin film with inverse hemispheric structure was fabricated on a Pt/Ti/SiO2/Si substrate by the sol-gel and dip coating method for use as an anode for 3-dimensional (3D) thin-film batteries. Polystyrene (PS) beads of 400 nm diameter were used to prepare the template for the inverse hemispheric structure. A coating solution prepared using precursor sources was dropped on the template-deposited substrates, which were then calcinated at 400 degrees C. The template was removed by calcination, and the inverse hemispheric structure was successfully formed by an annealing process. The cyclic performance during high-rate charge/discharge processes of the Li4Ti5O12 film with inverse hemispheric structure was superior to that of the flat Li4Ti5O12 film.