DC Field | Value | Language |
---|---|---|
dc.contributor.author | Adurodija, FO | ko |
dc.contributor.author | Song, J | ko |
dc.contributor.author | Kim, SD | ko |
dc.contributor.author | Kwon, SH | ko |
dc.contributor.author | Kim, SK | ko |
dc.contributor.author | Yoon, KH | ko |
dc.contributor.author | Ahn, Byung Tae | ko |
dc.date.accessioned | 2009-06-18T01:27:00Z | - |
dc.date.available | 2009-06-18T01:27:00Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999-01 | - |
dc.identifier.citation | THIN SOLID FILMS, v.338, no.1-2, pp.13 - 19 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/9542 | - |
dc.description.abstract | The crystallization of CuInSe(2) thin films by high Se vapour selenization of co-sputtered Cu-In alloy precursor within a partially closed graphite container is reported. X-ray diffusion (XRD) analysis of the Cu-In alloy films displayed mainly the CuIn(2) and Cu(11)In(9) phases. A three-fold volume expansion was recorded in all the selenized CuInSe(2) films at 500-550 degrees C. Large and densely packed crystals with sizes of about 5 mu m were exhibited by the films irrespective of whether they were Cu-rich or In-rich. Single phase chalcopyrite CuInSe(2) structure with preferential orientation in the (112) direction were obtained. Films with a wide range of compositions (Cu/In of 0.43-1.2 and Se/(Cu + In) of 0.92-1.47) were fabricated. All the films where Se rich, with the exception of samples with very high Cu content. The measured film resistivities varied from 10(-1) to 10(5) Omega-cm in consistence with the increasing; Cu content of the alloy precursor during deposition. The alloy films with very high In content yielded the CuIn(2)Se(3.5) or CuIn(3)Se(5) compound as determined from XRD and EDX analyses. A study of the reaction mechanism performed between 250 and 550 degrees C indicated that the crystal growth was assisted by the formation of the CuSe flux agent. The development of a suitable window layer to test the photovoltaic properties of these films is currently in progress. (C) 1999 Elsevier Science S.A. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | HIGH-QUALITY CUINSE2 | - |
dc.subject | SOLAR-CELLS | - |
dc.subject | SELENIZATION | - |
dc.title | Growth of CuInSe(2) thin films by high vapour Se treatment of co-sputtered Cu-In alloy in a graphite container | - |
dc.type | Article | - |
dc.identifier.wosid | 000078758500004 | - |
dc.identifier.scopusid | 2-s2.0-0032715664 | - |
dc.type.rims | ART | - |
dc.citation.volume | 338 | - |
dc.citation.issue | 1-2 | - |
dc.citation.beginningpage | 13 | - |
dc.citation.endingpage | 19 | - |
dc.citation.publicationname | THIN SOLID FILMS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
dc.contributor.nonIdAuthor | Adurodija, FO | - |
dc.contributor.nonIdAuthor | Song, J | - |
dc.contributor.nonIdAuthor | Kim, SD | - |
dc.contributor.nonIdAuthor | Kwon, SH | - |
dc.contributor.nonIdAuthor | Kim, SK | - |
dc.contributor.nonIdAuthor | Yoon, KH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | growth mechanism | - |
dc.subject.keywordAuthor | selenides | - |
dc.subject.keywordAuthor | solar cells | - |
dc.subject.keywordAuthor | sputtering | - |
dc.subject.keywordPlus | HIGH-QUALITY CUINSE2 | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | SELENIZATION | - |
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