DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seo, Jung Won | ko |
dc.contributor.author | Baik, Seung Jae | ko |
dc.contributor.author | Kang, Sang Jung | ko |
dc.contributor.author | Hong, Yun Ho | ko |
dc.contributor.author | Yang, Ji-Hwan | ko |
dc.contributor.author | Fang, Liang | ko |
dc.contributor.author | Lim, Koeng Su | ko |
dc.date.accessioned | 2013-03-09T02:04:14Z | - |
dc.date.available | 2013-03-09T02:04:14Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-02 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.96, no.5 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/95069 | - |
dc.description.abstract | We demonstrated that an Al/p-type amorphous silicon (p-a-Si)/Al switching device exhibits stable, nonvolatile resistive switching characteristics as well as reliable data retention at 85 degrees C. It is directly observed that the conducting filament is created after electroforming and incorporates the top metal migrated or diffused into a-Si layer. In addition, by analyzing the constitution of the conducting filament, we investigated the microscopic nature of the conducting filament. These results suggest that the Al/p-a-Si/Al device has potential for future nonvolatile memory applications. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Evidence of Al induced conducting filament formation in Al/amorphous silicon/Al resistive switching memory device | - |
dc.type | Article | - |
dc.identifier.wosid | 000274319500111 | - |
dc.type.rims | ART | - |
dc.citation.volume | 96 | - |
dc.citation.issue | 5 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.3308471 | - |
dc.contributor.localauthor | Lim, Koeng Su | - |
dc.contributor.nonIdAuthor | Seo, Jung Won | - |
dc.contributor.nonIdAuthor | Baik, Seung Jae | - |
dc.contributor.nonIdAuthor | Kang, Sang Jung | - |
dc.contributor.nonIdAuthor | Hong, Yun Ho | - |
dc.contributor.nonIdAuthor | Yang, Ji-Hwan | - |
dc.contributor.nonIdAuthor | Fang, Liang | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | aluminium | - |
dc.subject.keywordAuthor | amorphous semiconductors | - |
dc.subject.keywordAuthor | diffusion | - |
dc.subject.keywordAuthor | electroforming | - |
dc.subject.keywordAuthor | random-access storage | - |
dc.subject.keywordAuthor | semiconductor storage | - |
dc.subject.keywordAuthor | silicon | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.