Dual-Mode High-Dynamic Range Class E HBT Power Amplifier for WCDMA EER Transmitter

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dc.contributor.authorKim, Ki-Yeongko
dc.contributor.authorKim, Woo-Youngko
dc.contributor.authorPark, Chul-Soonko
dc.date.accessioned2013-03-09T01:25:01Z-
dc.date.available2013-03-09T01:25:01Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2010-10-
dc.identifier.citationIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.20, pp.572 - 574-
dc.identifier.issn1531-1309-
dc.identifier.urihttp://hdl.handle.net/10203/94966-
dc.description.abstractThis letter demonstrates a high-dynamic range GaAs heterojunction bipolar transistor Class E power amplifier (PA) for a WCDMA envelope elimination and restoration transmitter using a dual-mode amplification. An impedance optimization can operate the lossless high-power Class E mode and lossless low-power Class AB mode. This PA has a high dynamic range of -50 dBm to 27 dBm and obtains a remarkably improved efficiency of 9% and 27% power-added efficiency (PAE) at output powers of 0 dBm and 10 dBm, respectively, for low-power mode, and 40% and 48% PAE at 20 and 27 dBm, respectively, for high-power mode.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectPOLAR TRANSMITTER-
dc.titleDual-Mode High-Dynamic Range Class E HBT Power Amplifier for WCDMA EER Transmitter-
dc.typeArticle-
dc.identifier.wosid000283376200014-
dc.identifier.scopusid2-s2.0-77957763019-
dc.type.rimsART-
dc.citation.volume20-
dc.citation.beginningpage572-
dc.citation.endingpage574-
dc.citation.publicationnameIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS-
dc.identifier.doi10.1109/LMWC.2010.2066263-
dc.contributor.localauthorPark, Chul-Soon-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorClass E-
dc.subject.keywordAuthorhetero-junction bipolar transistor (HJBT)-
dc.subject.keywordAuthormonolithic microwave integrated circuit (MMIC)-
dc.subject.keywordAuthorpower amplifier (PA)-
dc.subject.keywordPlusPOLAR TRANSMITTER-
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EE-Journal Papers(저널논문)
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