Fabrication of Cu(In,Ga)Se-2 solar cell with ZnS/CdS double layer as an alternative buffer

Abstract

A ZnS/CdS double layer was developed to enhance the light transmittance by ZnS, while keeping the good heterojunction with CIGS by CdS layer Through optimization of deposition process. very thin and uniform CdS layer was deposited to minimize the light blocking effect in short wavelength region No cracks have been observed in the ZnS/CdS double layer The optical transmittance of the ZnS/CdS double layer was as high as that of ZnS single layer The short-circuit current of CIGS solar cell was increased with the ZnS/CdS lam However, the fill factor was decreased compared to the CIGS solar cell with CdS single layer, suggesting a thinner ZnS is required At present, the best cell has yielded an efficiency of 10 08% (C) 2009 Elsevier B V All rights reserved