Quantum transport of holes in 1D, 2D, and 3D devices: the k center dot p method

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dc.contributor.authorShin, Mincheolko
dc.date.accessioned2013-03-08T22:10:12Z-
dc.date.available2013-03-08T22:10:12Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2011-06-
dc.identifier.citationJOURNAL OF COMPUTATIONAL ELECTRONICS, v.10, no.1-2, pp.44 - 50-
dc.identifier.issn1569-8025-
dc.identifier.urihttp://hdl.handle.net/10203/94449-
dc.description.abstractQuantum transport of holes in one-, two- and three-dimensional devices is simulated based on the 6-band k . p method. Detailed numerical aspects for an efficient development of a k . p-based simulator are provided. In particular, real-space and k-space discretization schemes for devices of different dimensionality are described and their effectiveness in numerical implementation is compared. The mode-space approach for drastic reduction of computation time is also described. The capability of the k . p-based simulator is demonstrated by investigating various aspects of hole transport in devices of different dimensionality.-
dc.languageEnglish-
dc.publisherSPRINGER-
dc.subjectSILICON-
dc.titleQuantum transport of holes in 1D, 2D, and 3D devices: the k center dot p method-
dc.typeArticle-
dc.identifier.wosid000300735800005-
dc.identifier.scopusid2-s2.0-79959203898-
dc.type.rimsART-
dc.citation.volume10-
dc.citation.issue1-2-
dc.citation.beginningpage44-
dc.citation.endingpage50-
dc.citation.publicationnameJOURNAL OF COMPUTATIONAL ELECTRONICS-
dc.contributor.localauthorShin, Mincheol-
dc.type.journalArticleArticle-
dc.subject.keywordAuthork . p-
dc.subject.keywordAuthorHole-
dc.subject.keywordAuthorMOSFET-
dc.subject.keywordAuthorNanowire-
dc.subject.keywordAuthorNon-equilibrium Green&apos-
dc.subject.keywordAuthors function-
dc.subject.keywordAuthorPMOS-
dc.subject.keywordAuthorDevice simulation-
dc.subject.keywordAuthorTransistors-
dc.subject.keywordAuthorTransport-
dc.subject.keywordAuthorValence band-
dc.subject.keywordPlusSILICON-
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