DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sung-Ho | ko |
dc.contributor.author | Choi, Sung-Jin | ko |
dc.contributor.author | Moon, Dong-Il | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2013-03-08T20:02:54Z | - |
dc.date.available | 2013-03-08T20:02:54Z | - |
dc.date.created | 2012-03-07 | - |
dc.date.created | 2012-03-07 | - |
dc.date.issued | 2012-01 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.1, pp.241 - 246 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/94134 | - |
dc.description.abstract | A novel interface characterization technique is proposed to extract interface trap density Nit in fully depleted silicon-on-insulator MOSFETs. The proposed technique utilizes the temporal variation of the drain current, which is caused by the application of a single pulse to the gate in order to trigger charge pumping (CP). Vacant interface traps created as a result of recombination through the CP effect are gradually filled by carriers generated from a floating body (FB). By the characterization of this transient phenomenon, the interface trap density is directly extracted from FB devices without extra body contacts. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | LIFETIME MEASUREMENT | - |
dc.subject | CARRIER GENERATION | - |
dc.subject | THIN-FILM | - |
dc.subject | TRANSISTORS | - |
dc.subject | ENHANCEMENT | - |
dc.title | A New Charge-Pumping Technique for a Double-Gated SOI MOSFET Using Pulsed Drain Current Transients | - |
dc.type | Article | - |
dc.identifier.wosid | 000298756100035 | - |
dc.identifier.scopusid | 2-s2.0-84855424533 | - |
dc.type.rims | ART | - |
dc.citation.volume | 59 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 241 | - |
dc.citation.endingpage | 246 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2011.2171489 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Charge pumping (CP) | - |
dc.subject.keywordAuthor | drain current transient | - |
dc.subject.keywordAuthor | floating body (FB) | - |
dc.subject.keywordAuthor | interface trap | - |
dc.subject.keywordAuthor | silicon-on-insulator (SOI) MOSFET | - |
dc.subject.keywordPlus | LIFETIME MEASUREMENT | - |
dc.subject.keywordPlus | CARRIER GENERATION | - |
dc.subject.keywordPlus | THIN-FILM | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
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