DC Field | Value | Language |
---|---|---|
dc.contributor.author | Fang, Liang | ko |
dc.contributor.author | Baik, Seung-Jae | ko |
dc.contributor.author | Lim, Koeng-Su | ko |
dc.contributor.author | Yoo, Seung-Hyup | ko |
dc.contributor.author | Seo, Myung-Soo | ko |
dc.contributor.author | Kang, Sang-Jung | ko |
dc.contributor.author | Seo, Jung-Won | ko |
dc.date.accessioned | 2013-03-08T19:59:27Z | - |
dc.date.available | 2013-03-08T19:59:27Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-05 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.96, no.19, pp.193501 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/94125 | - |
dc.description.abstract | A thermally evaporated p-type amorphous tungsten oxide (p-a-WO3) film was introduced as a buffer layer between SnO2 and p-type amorphous silicon carbide (p-a-SiC) of pin-type amorphous silicon based solar cells. Using the Schottky barrier model, it is shown that the p-a-WO3 layer lowered the Schottky barrier height, which enhanced the open circuit voltage and the blue response compared to a bufferless cell. By inserting a 2-nm-thick p-a-WO3 layer between SnO2 and an 8-nm-thick p-a-SiC layer, the conversion efficiency was increased by 7.3% compared to the optimized bufferless cell only with a 10-nm-thick p-a-SiC window layer. (C) 2010 American Institute of Physics. [doi:10.1063/1.3427396] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | FILMS | - |
dc.title | Tungsten oxide as a buffer layer inserted at the SnO2/p-a-SiC interface of pin-type amorphous silicon based solar cells | - |
dc.type | Article | - |
dc.identifier.wosid | 000277756400076 | - |
dc.identifier.scopusid | 2-s2.0-77953014801 | - |
dc.type.rims | ART | - |
dc.citation.volume | 96 | - |
dc.citation.issue | 19 | - |
dc.citation.beginningpage | 193501 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.3427396 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lim, Koeng-Su | - |
dc.contributor.localauthor | Yoo, Seung-Hyup | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | amorphous semiconductors | - |
dc.subject.keywordAuthor | buffer layers | - |
dc.subject.keywordAuthor | elemental semiconductors | - |
dc.subject.keywordAuthor | Schottky diodes | - |
dc.subject.keywordAuthor | silicon | - |
dc.subject.keywordAuthor | silicon compounds | - |
dc.subject.keywordAuthor | solar cells | - |
dc.subject.keywordAuthor | tin compounds | - |
dc.subject.keywordAuthor | tungsten compounds | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.subject.keywordPlus | FILMS | - |
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