DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, Shuai | ko |
dc.contributor.author | Pu, Jing | ko |
dc.contributor.author | Chan, Daniel S. H. | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Loh, Kian Ping | ko |
dc.date.accessioned | 2013-03-08T19:44:42Z | - |
dc.date.available | 2013-03-08T19:44:42Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-04 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.96, no.14 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/94086 | - |
dc.description.abstract | Solution-processable, isolated graphene oxide (GO) monolayers have been used as a charge trapping dielectric in TaN gate/Al(2)O(3)/isolated GO sheets/SiO(2)/p-Si memory device (TANOS). The TANOS type structure serves as memory device with the threshold voltage controlled by the amount of charge trapped in the GO sheet. Capacitance-Voltage hysteresis curves reveal a 7.5 V memory window using the sweep voltage of -5-14 V. Thermal reduction in the GO to graphene reduces the memory window to 1.4 V. The unique charge trapping properties of GO points to the potential applications in flexible organic memory devices. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | GRAPHITE OXIDE | - |
dc.subject | FUNCTIONALIZED GRAPHENE | - |
dc.subject | DEVICES | - |
dc.subject | LAYER | - |
dc.title | Wide memory window in graphene oxide charge storage nodes | - |
dc.type | Article | - |
dc.identifier.wosid | 000276554600075 | - |
dc.identifier.scopusid | 2-s2.0-77951190481 | - |
dc.type.rims | ART | - |
dc.citation.volume | 96 | - |
dc.citation.issue | 14 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.3383234 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Wang, Shuai | - |
dc.contributor.nonIdAuthor | Pu, Jing | - |
dc.contributor.nonIdAuthor | Chan, Daniel S. H. | - |
dc.contributor.nonIdAuthor | Loh, Kian Ping | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | alumina | - |
dc.subject.keywordAuthor | elemental semiconductors | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | monolayers | - |
dc.subject.keywordAuthor | silicon | - |
dc.subject.keywordAuthor | silicon compounds | - |
dc.subject.keywordAuthor | storage media | - |
dc.subject.keywordAuthor | tantalum compounds | - |
dc.subject.keywordPlus | GRAPHITE OXIDE | - |
dc.subject.keywordPlus | FUNCTIONALIZED GRAPHENE | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | LAYER | - |
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