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Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices

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dc.contributor.authorPu, Jingko
dc.contributor.authorChan, Daniel S. H.ko
dc.contributor.authorKim, Sun-Jungko
dc.contributor.authorCho, BJko
dc.contributor.authorChan, DSHko
dc.contributor.authorCho, Byung Jinko
dc.date.accessioned2013-03-08T18:57:35Z-
dc.date.available2013-03-08T18:57:35Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2009-11-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2739 - 2745-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/93973-
dc.description.abstractAluminum-doped gadolinium oxides GdAlO(x) are proposed as a blocking oxide layer in charge-trap-type Flash memory cell devices. Greatly improved operation speed and charge retention properties have been demonstrated, compared to conventional Al(2)O(3) blocking layer. The optimization of Al percentage in GdAlO(x), as well as charge loss mechanism in the memory cell device, has also been systematically studied.-
dc.languageEnglish-
dc.publisherIEEE-
dc.subjectELEVATED-TEMPERATURES-
dc.subjectMNOS STRUCTURES-
dc.subjectFILMS-
dc.subjectTRANSISTORS-
dc.subjectDISCHARGE-
dc.subjectCELLS-
dc.subjectBAND-
dc.titleAluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices-
dc.typeArticle-
dc.identifier.wosid000271019500047-
dc.identifier.scopusid2-s2.0-70350743006-
dc.type.rimsART-
dc.citation.volume56-
dc.citation.issue11-
dc.citation.beginningpage2739-
dc.citation.endingpage2745-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/TED.2009.2030834-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorPu, Jing-
dc.contributor.nonIdAuthorChan, Daniel S. H.-
dc.contributor.nonIdAuthorKim, Sun-Jung-
dc.contributor.nonIdAuthorCho, BJ-
dc.contributor.nonIdAuthorChan, DSH-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorFlash memory-
dc.subject.keywordAuthorGdAlOx blocking layer-
dc.subject.keywordAuthorpolysilicon-silicon oxide-silicon nitride-silicon oxide-silicon (SONOS)-
dc.subject.keywordAuthorretention-
dc.subject.keywordPlusELEVATED-TEMPERATURES-
dc.subject.keywordPlusMNOS STRUCTURES-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusDISCHARGE-
dc.subject.keywordPlusCELLS-
dc.subject.keywordPlusBAND-
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