Atomic-Scale Investigation of Epitaxial Graphene Grown on 6H-SiC(0001) Using Scanning Tunneling Microscopy and Spectroscopy

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Graphene was epitaxially grown on a 6H-SiC(0001) substrate by thermal decomposition of SiC under ultrahigh vacuum conditions Using scanning tunneling microscopy (STM), we monitored the evolution of the graphene growth as a function of the temperature We found that the evaporation of Si occurred dominantly from the corner of the step rather than on the terrace A carbon-rich (6 root 3 x 6 root 3)R30 degrees layer, monolayer graphene, and bilayer graphene were identified by measuring the roughness, step height, and atomic structures Defect structures such as nanotubes and scattering defects on the monolayer graphene are also discussed. Furthermore, we confirmed that the Dirac points (E(D)) of the monolayer and bilayer graphene were clearly resolved by scanning tunneling spectroscopy (STS).
Publisher
AMER CHEMICAL SOC
Issue Date
2010-08
Language
English
Article Type
Article
Keywords

FILMS; TRANSISTORS; GRAPHITE

Citation

JOURNAL OF PHYSICAL CHEMISTRY C, v.114, no.31, pp.13344 - 13348

ISSN
1932-7447
DOI
10.1021/jp1048716
URI
http://hdl.handle.net/10203/93638
Appears in Collection
CH-Journal Papers(저널논문)
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