DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Eun-Ae | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-03-08T16:48:08Z | - |
dc.date.available | 2013-03-08T16:48:08Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-03 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.94, no.12, pp.122901 - 122901 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/93629 | - |
dc.description.abstract | We perform quasiparticle energy calculations to study the charge-transition levels of oxygen vacancy (V-O) in HfO2. The negative-U property of V-O can explain flat band voltage shifts and threshold voltage (V-th) instability in hafnium based devices. In p(+) Si gate electrode, the Fermi level pinning varies by up to 0.55 eV, in good agreement with the measured values. Depending on gate bias, V-O traps electrons or holes from the Si channel, causing the V-th instability. It is suggested that short time-scale charge trapping/detrapping is due to metastable V-O(-1) centers, whereas stable V-O(-2) centers dominate long time-scale instability. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Charge-transition levels of oxygen vacancy as the origin of device instability in HfO2 gate stacks through quasiparticle energy calculations | - |
dc.type | Article | - |
dc.identifier.wosid | 000264633500042 | - |
dc.identifier.scopusid | 2-s2.0-63749093037 | - |
dc.type.rims | ART | - |
dc.citation.volume | 94 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 122901 | - |
dc.citation.endingpage | 122901 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.3106643 | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | dielectric materials | - |
dc.subject.keywordAuthor | electrodes | - |
dc.subject.keywordAuthor | electron traps | - |
dc.subject.keywordAuthor | elemental semiconductors | - |
dc.subject.keywordAuthor | Fermi level | - |
dc.subject.keywordAuthor | hafnium compounds | - |
dc.subject.keywordAuthor | hole traps | - |
dc.subject.keywordAuthor | MIS devices | - |
dc.subject.keywordAuthor | silicon | - |
dc.subject.keywordAuthor | vacancies (crystal) | - |
dc.subject.keywordAuthor | V-centres | - |
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