DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bae, Dong-Il | ko |
dc.contributor.author | Ryu, Seong-Wan | ko |
dc.contributor.author | Gu, Bonsang | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2013-03-08T15:46:09Z | - |
dc.date.available | 2013-03-08T15:46:09Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-02 | - |
dc.identifier.citation | MICROELECTRONIC ENGINEERING, v.87, no.2, pp.135 - 138 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.uri | http://hdl.handle.net/10203/93458 | - |
dc.description.abstract | New investigations are presented here on a high-density and DRAM-like high-speed non-volatile memory (NVM) application of unified RAM (URAM). For a high-density application of URAM. multiple data storage is demonstrated with a multi-dual cell (MDC). Because each NVM state can be split by programming with a one-transistor (IT) DRAM without a capacitor, the total number of memory states can be doubled. Furthermore, a high-speed DRAM-level NVM scheme is proposed for the joint operation of IT DRAM buffer programming and NVM post-background programming. The MDC and the proposed scheme are unique URAM properties that can extend the application range of memory devices. (C) 2009 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | A new approach to cell size scaling with a multi-dual cell and a buffer/background programming of unified RAM | - |
dc.type | Article | - |
dc.identifier.wosid | 000273292700009 | - |
dc.identifier.scopusid | 2-s2.0-70450255192 | - |
dc.type.rims | ART | - |
dc.citation.volume | 87 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 135 | - |
dc.citation.endingpage | 138 | - |
dc.citation.publicationname | MICROELECTRONIC ENGINEERING | - |
dc.identifier.doi | 10.1016/j.mee.2009.06.027 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Unified RAM (URAM) | - |
dc.subject.keywordAuthor | Multi-dual cell (MDC) | - |
dc.subject.keywordAuthor | Soft programming | - |
dc.subject.keywordAuthor | Background programming | - |
dc.subject.keywordAuthor | One-transistor (1T) capacitorless DRAM | - |
dc.subject.keywordAuthor | Non-volatile memory (NVM) | - |
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