DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Eun-Uk | ko |
dc.contributor.author | Baeg, Kang-Jun | ko |
dc.contributor.author | Noh, Yong-Young | ko |
dc.contributor.author | Kim, Dong-Yu | ko |
dc.contributor.author | Lee, Takhee | ko |
dc.contributor.author | Park, Inkyu | ko |
dc.date.accessioned | 2013-03-08T15:35:40Z | - |
dc.date.available | 2013-03-08T15:35:40Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-09 | - |
dc.identifier.citation | NANOTECHNOLOGY, v.20, no.35 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | http://hdl.handle.net/10203/93436 | - |
dc.description.abstract | We have developed a new method that combines nanoimprint lithography and metal nanoparticle solution processing for fabricating metal nanowires. A polymer template with nanoscale features, fabricated by nanoimprint lithography, provided physical reservoirs which were filled with a silver nanoparticle solution during the spin-coating. After the lift-off process, the defined silver nanoparticle patterns were annealed to enhance the conductivity for use as electrodes. Silver nanowire patterns (500 nm linewidth with a 300 nm gap) were fabricated without using an expensive high-vacuum system for metal deposition. This method demonstrated pattern resolution enhancement compared with ink-jet printing which inherently suffers from ink spreading on the substrate surface. By using this method, organic thin film transistors composed of the solution-processed silver source/drain electrodes with a channel length of 300 nm were fabricated and showed comparable behaviors to those with vacuum-deposited electrodes. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Templated assembly of metal nanoparticles in nanoimprinted patterns for metal nanowire fabrication | - |
dc.type | Article | - |
dc.identifier.wosid | 000268911500005 | - |
dc.identifier.scopusid | 2-s2.0-70349158117 | - |
dc.type.rims | ART | - |
dc.citation.volume | 20 | - |
dc.citation.issue | 35 | - |
dc.citation.publicationname | NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1088/0957-4484/20/35/355302 | - |
dc.contributor.localauthor | Park, Inkyu | - |
dc.contributor.nonIdAuthor | Kim, Eun-Uk | - |
dc.contributor.nonIdAuthor | Baeg, Kang-Jun | - |
dc.contributor.nonIdAuthor | Noh, Yong-Young | - |
dc.contributor.nonIdAuthor | Kim, Dong-Yu | - |
dc.contributor.nonIdAuthor | Lee, Takhee | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | NM CHANNEL-LENGTH | - |
dc.subject.keywordPlus | PRINTING TECHNIQUES | - |
dc.subject.keywordPlus | LITHOGRAPHY | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | POLYMERS | - |
dc.subject.keywordPlus | IMPRINT | - |
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