DC Field | Value | Language |
---|---|---|
dc.contributor.author | Dalapati, Goutam Kumar | ko |
dc.contributor.author | Tong, Yi | ko |
dc.contributor.author | Loh, Wei-Yip | ko |
dc.contributor.author | Mun, Hoe Keat | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2013-03-08T09:54:52Z | - |
dc.date.available | 2013-03-08T09:54:52Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-08 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, no.8, pp.1831 - 1837 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/92783 | - |
dc.description.abstract | In this paper, electrical and interfacial properties of MOS capacitors with atomic layer deposited (ALD) Al(2)O(3), HfO(2), and HfAlO gate dielectrics on sulfur-passivated (S-passivated) GaAs substrates were investigated. HfAlO on p-type GaAs has shown superior electrical properties over AL(2)O(3) or HfO(2) on GaAs, and it is attributed to the reduction of the Ga-O formation at the interfacial layer. HfAlO on p-type GaAs exhibits the best electrical properties after postdeposition annealing (PDA) at 500 degrees C. It is found that PDA, at above 500 degrees C, causes a significant amount of Ga and As out-diffusion into the high-kappa, dielectric, which degrades the interface, as well as bulk high-kappa properties. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | RAY-PHOTOELECTRON-SPECTROSCOPY | - |
dc.subject | GA2O3-GAAS STRUCTURES | - |
dc.subject | THERMAL-STABILITY | - |
dc.subject | OXIDE | - |
dc.subject | SUBSTRATE | - |
dc.subject | MOSFETS | - |
dc.subject | SI | - |
dc.title | Electrical and interfacial characterization of atomic layer deposited high-kappa gate dielectrics on GaAs for advanced CMOS devices | - |
dc.type | Article | - |
dc.identifier.wosid | 000248390600004 | - |
dc.identifier.scopusid | 2-s2.0-34547912197 | - |
dc.type.rims | ART | - |
dc.citation.volume | 54 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 1831 | - |
dc.citation.endingpage | 1837 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2007.901261 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Dalapati, Goutam Kumar | - |
dc.contributor.nonIdAuthor | Tong, Yi | - |
dc.contributor.nonIdAuthor | Loh, Wei-Yip | - |
dc.contributor.nonIdAuthor | Mun, Hoe Keat | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | atomic layer deposition (ALD) | - |
dc.subject.keywordAuthor | frequency dispersion | - |
dc.subject.keywordAuthor | GaAs MOS | - |
dc.subject.keywordAuthor | high-kappa dielectric | - |
dc.subject.keywordAuthor | interface trap | - |
dc.subject.keywordAuthor | surface passivation | - |
dc.subject.keywordAuthor | thermal stability | - |
dc.subject.keywordPlus | RAY-PHOTOELECTRON-SPECTROSCOPY | - |
dc.subject.keywordPlus | GA2O3-GAAS STRUCTURES | - |
dc.subject.keywordPlus | THERMAL-STABILITY | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | SI | - |
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