DC Field | Value | Language |
---|---|---|
dc.contributor.author | Zang, H | ko |
dc.contributor.author | Loh, WY | ko |
dc.contributor.author | Ye, JD | ko |
dc.contributor.author | Lo, GQ | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2013-03-08T09:17:34Z | - |
dc.date.available | 2013-03-08T09:17:34Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-12 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.28, no.12, pp.1117 - 1119 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/92711 | - |
dc.description.abstract | Monolithic integration of tensile-strained Si/Germanium (Ge)-channel n-MOS and tensile-strained Ge p-MOS with ultrathin (equivalent oxide thickness similar to 14 angstrom) HfO2 gate dielectric and TaN gate stack on Si substrate is demonstrated. Defect-free Ge layer (279 nm) grown by ultrahigh vacuum chemical-vapor deposition is achieved using a two-step Ge-growth technique coupled with compliant Si/SiGe buffer layers. The epi-Ge layer experiences tensile strain of up to similar to 0.67% and exhibits a peak hole mobility of 250 cm(2)/V. S which is 100% higher than the universal Si hole mobility. The gate leakage current is two orders of magnitude lower compared to the reported results on Ge bulk. | - |
dc.language | English | - |
dc.publisher | IEEE | - |
dc.subject | SURFACE PASSIVATION | - |
dc.subject | GE | - |
dc.title | Tensile-strained germanium CMOS integration on silicon | - |
dc.type | Article | - |
dc.identifier.wosid | 000251429800014 | - |
dc.identifier.scopusid | 2-s2.0-36549001647 | - |
dc.type.rims | ART | - |
dc.citation.volume | 28 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 1117 | - |
dc.citation.endingpage | 1119 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2007.909836 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Zang, H | - |
dc.contributor.nonIdAuthor | Loh, WY | - |
dc.contributor.nonIdAuthor | Ye, JD | - |
dc.contributor.nonIdAuthor | Lo, GQ | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | CMOS | - |
dc.subject.keywordAuthor | high-kappa | - |
dc.subject.keywordAuthor | HfO2 | - |
dc.subject.keywordAuthor | germanium (Ge) | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.subject.keywordPlus | SURFACE PASSIVATION | - |
dc.subject.keywordPlus | GE | - |
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